位置：首页 > IC中文资料第1394页 > VNP28N04
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP28N04 | ?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F | STMICROELECTRONICS 意法半导体 |   | |
VNP28N04 | FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F | STMICROELECTRONICS 意法半导体 | | |
VNP28N04 | 封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNP28N04 | OMNIFET :FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：226.76 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：ISOWATT-220-3 包装：管件 描述：IC PWR DRVR N-CH 1:1 ISOWATT220 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：226.76 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：226.76 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
VNP28N04产品属性
- 类型
描述
- 型号
VNP28N04
- 功能描述
MOSFET N-Ch 42V 28A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
ST/意法 |
2022+ |
TO-220AB |
6600 |
只做原装,假一罚十,长期供货。 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST MICROELECTRONICS SEMI |
2023+ |
SMD |
2984 |
安罗世纪电子只做原装正品货 |
|||
ST |
24+ |
TO-220 |
8000 |
新到现货，只做全新原装正品 |
|||
ST/意法半导体 |
24+ |
TO-220 |
10000 |
十年沉淀唯有原装 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST(意法半导体) |
2021+ |
TO-220 |
523 |
||||
ST/意法半导体 |
23+ |
TO-220 |
12700 |
买原装认准中赛美 |
|||
ST/意法 |
22+ |
TO220ABNONISOL |
100837 |
VNP28N04芯片相关品牌
VNP28N04规格书下载地址
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2012-11-11
DdatasheetPDF页码索引
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