?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

文件：226.76 Kbytes Page：13 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

MOSFET POWER 42V 28A D2PAK

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

文件：226.76 Kbytes Page：13 Pages

MOSFET OMNIFET 42V 28A D2PAK

MOSFET OMNIFET 42V 28A D2PAK

FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F