?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

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封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

文件：367.12 Kbytes Page：11 Pages

封装/外壳：TO-220-3 整包 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220FP 集成电路（IC） 配电开关，负载驱动器

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Power MOSFET

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N-Channel MOSFET

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