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VND10N06价格
参考价格：￥4.2931
型号：VND10N06-1-E 品牌：STMicroelectronics 备注：这里有VND10N06多少钱，2026年最近7天走势，今日出价，今日竞价，VND10N06批发/采购报价，VND10N06行情走势销售排行榜，VND10N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND10N06 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h | STMICROELECTRONICS 意法半导体 |   | |
VND10N06 | fully autoprotected Power MOSFET 文件：510.05 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | |
VND10N06 | OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | |
VND10N06 | OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | |
VND10N06 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND10N06 | OMNIFET：全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | | |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET 文件：510.05 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno | ADV 爱德微 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor 文件：224.35 Kbytes Page：6 Pages | EXCELLIANCE 杰力科技 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：749.32 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET 文件：716 Kbytes Page：5 Pages | KEXIN 科信电子 | |
VND10N06产品属性
- 类型
描述
- 型号
VND10N06
- 功能描述
电源开关 IC - 配电 N-Ch 60V 10A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
DPAK |
880000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
25+ |
DPAK |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
25+ |
TO252 |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
ST支持实单 |
2115 |
TO252 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STMICROELECTRONICS |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST支持实单 |
24+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
ST |
23+ |
TO-251 |
16900 |
正规渠道,只有原装! |
|||
25+ |
12 |
公司现货库存 |
|||||
ST |
24+ |
IPAKTO-251TO252 |
8866 |
||||
ST |
23+ |
TO-251 |
5000 |
原装正品,假一罚十 |
VND10N06规格书下载地址
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