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型号 功能描述 生产厂家 企业 LOGO 操作
SDD10N06

Discrete Diodes

文件:127.42 Kbytes Page:1 Pages

SIRECTIFIER

矽莱克电子

SDD10N06

10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes

文件:406.19 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:126.87 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

SDD10N06产品属性

  • 类型

    描述

  • 型号

    SDD10N06

  • 制造商

    SIRECTIFIER

  • 制造商全称

    Sirectifier Semiconductors

  • 功能描述

    Discrete Diodes

更新时间:2026-5-18 18:25:00
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SAMHOP
TO-251
22+
6000
十年配单,只做原装

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