VND5N07价格

参考价格:¥5.5463

型号:VND5N07 品牌:STMicroelectronics 备注:这里有VND5N07多少钱,2025年最近7天走势,今日出价,今日竞价,VND5N07批发/采购报价,VND5N07行情走势销售排行榜,VND5N07报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VND5N07

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

VND5N07

fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

VND5N07

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICS

意法半导体

VND5N07

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VND5N07

OMNIFET IIfully autoprotected Power MOSFET

文件:507.97 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

OMNIFET IIfully autoprotected Power MOSFET

文件:507.97 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

OMNIFET IIfully autoprotected Power MOSFET

文件:507.97 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET:全自动保护功率MOSFET

STMICROELECTRONICS

意法半导体

功率开关芯片

STMICROELECTRONICS

意法半导体

VND5N07产品属性

  • 类型

    描述

  • 型号

    VND5N07

  • 功能描述

    MOSFET N-Ch 70V 5A OmniFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
TO-252
5115
百分百原装正品,可原型号开票
ST
2016+
TO-252
2500
只做原装,假一罚十,公司可开17%增值税发票!
ST/意法
25+
TO-252
32360
ST/意法全新特价VND5N07TR-E即刻询购立享优惠#长期有货
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
STMicroelectronics
2023+
D-Pak
18084
安罗世纪电子只做原装正品货
ST
19+
TO-252
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
TO-252-2
16900
正规渠道,只有原装!
ST/意法
23+
TO-252
4500
只做原装正品现货或订货假一赔十!
ST
21+
TO-252
10000
只做原装,公司现货,提供一站式BOM配单服务!
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

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