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VND5N07价格
参考价格:¥5.5463
型号:VND5N07 品牌:STMicroelectronics 备注:这里有VND5N07多少钱,2025年最近7天走势,今日出价,今日竞价,VND5N07批发/采购报价,VND5N07行情走势销售排行榜,VND5N07报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
VND5N07 | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | ||
VND5N07 | fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | ||
VND5N07 | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | ||
VND5N07 | 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器 | STMICROELECTRONICS 意法半导体 | ||
VND5N07 | OMNIFET IIfully autoprotected Power MOSFET 文件:507.97 Kbytes Page:24 Pages | STMICROELECTRONICS 意法半导体 | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | |||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | |||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | |||
OMNIFET IIfully autoprotected Power MOSFET 文件:507.97 Kbytes Page:24 Pages | STMICROELECTRONICS 意法半导体 | |||
OMNIFET IIfully autoprotected Power MOSFET 文件:507.97 Kbytes Page:24 Pages | STMICROELECTRONICS 意法半导体 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器 | STMICROELECTRONICS 意法半导体 | |||
OMNIFET:全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | |||
功率开关芯片 | STMICROELECTRONICS 意法半导体 |
VND5N07产品属性
- 类型
描述
- 型号
VND5N07
- 功能描述
MOSFET N-Ch 70V 5A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-252 |
5115 |
百分百原装正品,可原型号开票 |
|||
ST |
2016+ |
TO-252 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法 |
25+ |
TO-252 |
32360 |
ST/意法全新特价VND5N07TR-E即刻询购立享优惠#长期有货 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
STMicroelectronics |
2023+ |
D-Pak |
18084 |
安罗世纪电子只做原装正品货 |
|||
ST |
19+ |
TO-252 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-252-2 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
23+ |
TO-252 |
4500 |
只做原装正品现货或订货假一赔十! |
|||
ST |
21+ |
TO-252 |
10000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
VND5N07芯片相关品牌
VND5N07规格书下载地址
VND5N07参数引脚图相关
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VND5N07数据表相关新闻
VND5T035AKTR-E
进口代理
2024-11-14VND5E050ACJTR-E
进口代理
2023-6-9VND5E160AJTR-E 22+ 原装现货
VND5E160AJTR-E 22+ 原装现货
2023-5-8VND5E160AJTR-E
公司原装正品 现货库存 价格优势
2022-4-29VND5T035AKTR-E ST/意法 21+ HSSOP24
https://hfx03.114ic.com/
2022-1-28VND5T016ASPTR-E
门驱动器 Double CH High-Side 41V 16mOhm 70A
2021-11-25
DdatasheetPDF页码索引
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