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VND5N07TR-E价格
参考价格：￥3.6008
型号：VND5N07TR-E 品牌：STMicroelectronics 备注：这里有VND5N07TR-E多少钱，2025年最近7天走势，今日出价，今日竞价，VND5N07TR-E批发/采购报价，VND5N07TR-E行情走势销售排行榜，VND5N07TR-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND5N07TR-E | OMNIFET II fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 |   | |
VND5N07TR-E | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND5N07TR-E | 功率开关芯片 | STMICROELECTRONICS 意法半导体 | | |
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |
VND5N07TR-E产品属性
- 类型
描述
- 型号
VND5N07TR-E
- 功能描述
MOSFET N-Ch 70V 5A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
TO252 |
12500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
21+ |
NA |
15000 |
15年光格 只做原装正品 |
|||
ST(意法) |
24+ |
TO-252-3(DPAK) |
6641 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
ST |
20000 |
原装现货,可追溯原厂渠道 |
|||||
ST/意法半导体 |
2023+ |
DPAK |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
ST/意法 |
24+ |
TO-252 |
77500 |
只做原装，欢迎询价，量大价优 |
|||
ST/意法 |
2022+ |
DPAK(TO-252) |
8000 |
只做原装支持实单,有单必成。 |
|||
ST/意法 |
21+ |
TO-252-3 |
7500 |
百域芯优势 实单必成 可开13点增值税 |
|||
ST/意法半导体 |
25 |
DPAK |
6000 |
原装正品 |
|||
ST/意法 |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
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VND5N07TR-E规格书下载地址
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VND5N07TR-E数据表相关新闻
VND5T035AKTR-E
进口代理
2024-11-14VND5E050ACJTR-E
进口代理
2023-6-9VND5E160AJTR-E 22+ 原装现货
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2023-5-8VND5E160AJTR-E
公司原装正品 现货库存 价格优势
2022-4-29VND5T035AKTR-E ST/意法 21+ HSSOP24
https://hfx03.114ic.com/
2022-1-28VND5T016ASPTR-E
门驱动器 Double CH High-Side 41V 16mOhm 70A
2021-11-25
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