VND5N07TR-E价格

参考价格:¥3.6008

型号:VND5N07TR-E 品牌:STMicroelectronics 备注:这里有VND5N07TR-E多少钱,2025年最近7天走势,今日出价,今日竞价,VND5N07TR-E批发/采购报价,VND5N07TR-E行情走势销售排行榜,VND5N07TR-E报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VND5N07TR-E

OMNIFET II fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

VND5N07TR-E

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

OMNIFET IIfully autoprotected Power MOSFET

文件:507.97 Kbytes Page:24 Pages

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

STMICROELECTRONICS

意法半导体

VND5N07TR-E产品属性

  • 类型

    描述

  • 型号

    VND5N07TR-E

  • 功能描述

    MOSFET N-Ch 70V 5A OmniFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
SOT252
100000
代理渠道/只做原装/可含税
ST/意法
25+
原厂原封可拆样
64687
百分百原装现货 实单必成 欢迎询价
ST/意法
25+
TO-252
32360
ST/意法全新特价VND5N07TR-E即刻询购立享优惠#长期有货
ST/意法
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
STM
24+/25+
DPAK(TO-252)
7500
原装正品现货库存价优
ST
21+
TO252
12500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
STM
2018+
26976
代理原装现货/特价热卖!
ST/意法
23+
TO-252
4500
只做原装正品现货或订货假一赔十!
ST/意法半导体
22+
DPAK
15000
只有原装,原装,假一罚十
ST/意法半导体
23+
DPAK
12700
买原装认准中赛美

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