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VND5N07TR-E价格
参考价格：￥3.6008
型号：VND5N07TR-E 品牌：STMicroelectronics 备注：这里有VND5N07TR-E多少钱，2025年最近7天走势，今日出价，今日竞价，VND5N07TR-E批发/采购报价，VND5N07TR-E行情走势销售排行榜，VND5N07TR-E报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VND5N07TR-E | OMNIFET II fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 |   | |
VND5N07TR-E | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |
VND5N07TR-E产品属性
- 类型
描述
- 型号
VND5N07TR-E
- 功能描述
MOSFET N-Ch 70V 5A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
25+ |
原厂原封可拆样 |
64687 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
25+ |
TO-252 |
32360 |
ST/意法全新特价VND5N07TR-E即刻询购立享优惠#长期有货 |
|||
ST/意法 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
STM |
24+/25+ |
DPAK(TO-252) |
7500 |
原装正品现货库存价优 |
|||
ST |
21+ |
TO252 |
12500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ST/意法 |
23+ |
TO-252 |
4500 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法半导体 |
22+ |
DPAK |
15000 |
只有原装,原装,假一罚十 |
|||
ST/意法半导体 |
23+ |
DPAK |
12700 |
买原装认准中赛美 |
VND5N07TR-E规格书下载地址
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VND5N07TR-E数据表相关新闻
VND5T035AKTR-E
进口代理
2024-11-14VND5E050ACJTR-E
进口代理
2023-6-9VND5E160AJTR-E 22+ 原装现货
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2023-5-8VND5E160AJTR-E
公司原装正品 现货库存 价格优势
2022-4-29VND5T035AKTR-E ST/意法 21+ HSSOP24
https://hfx03.114ic.com/
2022-1-28VND5T016ASPTR-E
门驱动器 Double CH High-Side 41V 16mOhm 70A
2021-11-25
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