位置：首页 > IC中文资料第12635页 > VND5N07FM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND5N07FM | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 |   | |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | |
VND5N07FM产品属性
- 类型
描述
- 型号
VND5N07FM
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- OMNIFET
FULLY AUTOPROTECTED POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
STMicroelectronics |
24+ |
D-Pak |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
ST |
11+PBF |
TO-252 |
2500 |
现货 |
|||
ST |
2021+ |
TO-252 |
1000 |
只做原装，可提供样品 |
|||
ST/意法半导体 |
21+ |
DPAK |
10000 |
全新原装现货 |
|||
ST/意法 |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
|||
STM |
24+/25+ |
DPAK(TO-252) |
7500 |
原装正品现货库存价优 |
VND5N07FM芯片相关品牌
VND5N07FM规格书下载地址
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VND5N07FM数据表相关新闻
VND5T035AKTR-E
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2022-4-29VND5T035AKTR-E ST/意法 21+ HSSOP24
https://hfx03.114ic.com/
2022-1-28VND5T016ASPTR-E
门驱动器 Double CH High-Side 41V 16mOhm 70A
2021-11-25
DdatasheetPDF页码索引
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