位置：首页 > IC中文资料 > VND10N06TRE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno | ADV 爱德微 |   | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor 文件：224.35 Kbytes Page：6 Pages | EXCELLIANCE 杰力科技 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：749.32 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET 文件：716 Kbytes Page：5 Pages | KEXIN 科信电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
24+ |
NA/ |
45000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FUJITSU |
2016+ |
SMD |
3990 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
23+ |
SOT26/ |
20000 |
全新原装假一赔十 |
|||
ERIDE |
24+ |
SMD |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ROHM |
07+ |
SOT25/ |
5600 |
全新原装进口自己库存优势 |
|||
ROHM |
24+ |
SOT563 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ERIDE |
1020+ |
SMD |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FUJITSU |
23+ |
SMD |
50000 |
只做原装正品 |
|||
CJ/长电 |
24+ |
SOT-563 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
EMC/杰力 |
25+ |
TO-220 |
20300 |
EMC/杰力原装特价EMD10N06E即刻询购立享优惠#长期有货 |
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VND10N06TRE规格书下载地址
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