Features:

● Low Gate Charge for Fast Switching Application

● Low RDS(ON) to Minimize Conductive Loss

● 100% EAS Guaranteed

● Optimized V(BR)DSS Ruggedness

● Green Device Available

Description:

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.