| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EMD10N06E | N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | |
EMD10N06E | Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor 文件：224.35 Kbytes Page：6 Pages | EXCELLIANCE 杰力科技 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno | ADV 爱德微 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：749.32 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET 文件：716 Kbytes Page：5 Pages | KEXIN 科信电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ERIDE |
24+ |
65230 |
|||||
ROHM |
24+ |
SOD363 |
598000 |
原装现货假一赔十 |
|||
ROHM |
1922+ |
SOT563 |
9600 |
原装公司现货假一罚十特价欢迎来电咨询 |
|||
ROHM |
23+ |
SOT26/ |
20000 |
全新原装假一赔十 |
|||
ROHM/罗姆 |
23+ |
SOT563 |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
17+ |
SOT563 |
6200 |
100%原装正品现货 |
|||
CJ/长电 |
24+ |
SOT-563 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
ROHM/罗姆 |
22+ |
SOT563 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ROHM/罗姆 |
2023+ |
SOT-666 |
1000 |
原厂全新正品旗舰店优势现货 |
|||
ROHM |
2023+ |
SOT363 |
50000 |
原装现货 |
EMD10N06E芯片相关品牌
EMD10N06E规格书下载地址
EMD10N06E参数引脚图相关
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DdatasheetPDF页码索引
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