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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VI30120C-E3 | Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 120V TO262 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | |
VI30120C-E3产品属性
- 类型
描述
- 型号
VI30120C-E3
- 功能描述
肖特基二极管与整流器 30 Amp 120 Volt Dual TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
3550 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
20+ |
TO-262 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY原装 |
25+23+ |
TO-262 |
22329 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
23+ |
TO262AA |
2630 |
原厂原装正品 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
17+ |
TO-262 |
6200 |
||||
VISHAY |
23+ |
TO262AA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
1443+ |
TO-220 |
1250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
21+ |
TO-220 |
1529 |
原装现货假一赔十 |
VI30120C-E3规格书下载地址
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VI30120C-E3数据表相关新闻
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