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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30120C-E3 | Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世威世科技公司 |   | |
V30120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世威世科技公司 | |
V30120C-E3产品属性
- 类型
描述
- 型号
V30120C-E3
- 功能描述
肖特基二极管与整流器 30 Amp 120 Volt Dual TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO220-3 |
10500 |
原装元器件供应现货支持。咨询更多现货库存,支持样 |
|||
VISHAY/ |
24+ |
TO-220 |
8000 |
新到现货，只做全新原装正品 |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
20+ |
TO220-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
|||
VISHAY/威世 |
24+ |
TO-220F |
60000 |
||||
VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
|||
VISHAY/威世 |
ROHS/new original |
TO220-3 |
10500 |
原装元器件供应现货支持。咨询更多现货库存,支持样 |
|||
VISHAY/ |
24+ |
TO-220 |
5000 |
十年沉淀唯有原装 |
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V30120C-E3规格书下载地址
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DdatasheetPDF页码索引
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