型号 功能描述 生产厂家 企业 LOGO 操作
V30120C-E3

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

VISHAYVishay Siliconix

威世威世科技公司

V30120C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

VISHAYVishay Siliconix

威世威世科技公司

V30120C-E3产品属性

  • 类型

    描述

  • 型号

    V30120C-E3

  • 功能描述

    肖特基二极管与整流器 30 Amp 120 Volt Dual TrenchMOS

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2026-3-10 14:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/
24+
TO-220
5000
十年沉淀唯有原装
VISHAY
25+23+
TO-220
26922
绝对原装正品全新进口深圳现货
Vishay(威世)
24+
N/A
11800
可配单提供样品
VISHAY
26+
TO-252
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
VISHAY/
24+
TO-220
8000
新到现货,只做全新原装正品
VISHAY
18+
TO-220
85600
保证进口原装可开17%增值税发票
VISHAY/
24+
TO-220
5000
全新原装正品,现货销售
VISHAY/威世
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
VISHAY/
23+
TO-220
20000
VISHAY原装
24+
TO-220
30980
原装现货/放心购买

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