Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

Trench MOS Barrier Schottky Rectifier

文件：90.14 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier

文件：85.98 Kbytes Page：5 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：83.26 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：92.76 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：216.59 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：92.76 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：216.59 Kbytes Page：4 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V TO236AB 分立半导体产品 二极管 - 整流器 - 阵列

Trench MOS Barrier Schottky Rectifier

文件：90.14 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：83.26 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier

文件：90.14 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：83.26 Kbytes Page：4 Pages

Low forward voltage drop, low power losses

文件：95.53 Kbytes Page：4 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 60A 45V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity