VBT6045CBP-E3价格

参考价格:¥9.0998

型号:VBT6045CBP-E3/8W 品牌:Vishay 备注:这里有VBT6045CBP-E3多少钱,2025年最近7天走势,今日出价,今日竞价,VBT6045CBP-E3批发/采购报价,VBT6045CBP-E3行情走势销售排行榜,VBT6045CBP-E3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VBT6045CBP-E3

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

VishayVishay Siliconix

威世威世科技公司

VBT6045CBP-E3

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:83.26 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

VBT6045CBP-E3

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60A 45V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:92.76 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:216.59 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:92.76 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:216.59 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V TO236AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:83.26 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:90.14 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:83.26 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:90.14 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

VBT6045CBP-E3产品属性

  • 类型

    描述

  • 型号

    VBT6045CBP-E3

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

更新时间:2025-10-18 16:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
VISHAY(威世)
24+
TO-263AB
1471
特价优势库存质量保证稳定供货
VISHAY(威世)
24+
TO-263AB
5627
百分百原装正品,可原型号开票
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原装现货
VISHAYSEMICONDUCTORDIODESDIVIS
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VIS
22+
TO-263AB
6000
十年配单,只做原装
VISHAY/威世
24+
TO-263
60000
全新原装现货
VISHAY
24+
N/A
5000
十年沉淀唯有原装
VISHAY
23+
TO-263AB
50000
原装正品 支持实单

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