位置：首页 > IC中文资料第3517页 > V101
V101价格
参考价格：￥3.0125
型号：V10150S-E3/4W 品牌：Vishay 备注：这里有V101多少钱，2025年最近7天走势，今日出价，今日竞价，V101批发/采购报价，V101行情走势销售排行榜，V101报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 |  |   | |
THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR- | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier 文件：381.23 Kbytes Page：2 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | | | |
WMPF1E HORIZONTAL MANAGER 文件：308.15 Kbytes Page：1 Pages | PANDUITPanduit Corp Panduit公司Panduit科技有限公司 |  | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：132.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：147.69 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：122 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Safety Standard Capacitors 文件：52.6 Kbytes Page：2 Pages | VATRONICS Vatronics Technologies Limited |  | | |
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL Productwell Precision Elect.CO.,LTD |  | | |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon Riedon Powertron |  | | |
Precision Wirewound Resistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Powertron | | | |
Smooth, high torque, roller ratchet handle 文件：254.3 Kbytes Page：3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | |
V101产品属性
- 类型
描述
- 型号
V101
- 制造商
TAP-LOK(GROOV-PIN)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
2016+ |
TO220-3 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世通 |
20+ |
TO220-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
10+ |
TO220 |
2750 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
Vishay General Semiconductor - |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
24+ |
TO-220 |
180 |
原装现货假一赔十 |
|||
VISHAY |
2025+ |
TO220-3 |
3827 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY/威世 |
22+ |
TO-220 |
16800 |
全新进口原装现货,假一罚十 |
|||
VISHAY |
TO220 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
V101芯片相关品牌
V101规格书下载地址
V101参数引脚图相关
- z120
- xtr105
- xl4001
- x86架构
- x606
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- v8000
- V10E175
- V10E150
- V10E14P
- V10E140
- V10E130
- V10E11P
- V10D60C
- V10D45C
- V10681U
- V10621U
- V-105-1A4
- V104YLF
- V-104-1A4
- V1-04-13
- V103YLF
- V103A
- V-103-1C24-T
- V-103-1A5
- V-103-1A4
- V-1030
- V-1024
- V-102-1A4
- V10213MS02QA
- V10213MA08Q
- V-10-1C25-K
- V-10-1C25
- V-10-1B5
- V-10-1B4
- V-10-1A5
- V-10-1A4-T
- V-10-1A4
- V10170C-M3/4W
- V10150S-E3/4W
- V10150S
- V10150C
- V-101-1A4
- V-1011
- V-1010
- V1010
- V100ZT4P-CUTTAPE
- V100ZT4P
- V100ZT15P
- V100ZS3P
- V100ZC15PX1739
- V100ZA4P
- V100ZA4
- V100ZA3P
- V100ZA3
- V100ZA20P
- V100ZA15P
- V100ZA05P
- V100RA8
- V100MA4B
- V100MA4A
- V-1009
- V-1008
- V1008
- V-1007
- V-1006
- V-1005
- V-1004
- V1004
- V100-35.200N
- V-1003
- V-1002
- V-1001
- V1000LA80AP
- V-1000
- V0DDTD
- V07P95P
- V07P75P
- V07P60P
- V07P50P
- V07P40P
- V07P35P
V101数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14UXN40M7K
UXN40M7K
2021-10-20UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
