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V101价格

参考价格：￥3.0125

型号：V10150S-E3/4W 品牌：Vishay 备注：这里有V101多少钱，2025年最近7天走势，今日出价，今日竞价，V101批发/采购报价，V101行情走势销售排行榜，V101报价。

型号	功能描述	生产厂家企业	LOGO
V1010	THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger	THINKISEMI 思祁半导体	THINKISEMI
V1010_V01	THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger	THINKISEMI 思祁半导体	THINKISEMI
V10150C	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3	High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo	VishayVishay Siliconix 威世威世科技公司	Vishay
V10170C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V10170C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-	VishayVishay Siliconix 威世威世科技公司	Vishay
V10170C-M3_V01	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V1010	10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier 文件：381.23 Kbytes Page：2 Pages	THINKISEMI 思祁半导体	THINKISEMI
V10101AB-DC	WMPF1E HORIZONTAL MANAGER 文件：308.15 Kbytes Page：1 Pages	PANDUIT	PANDUIT
V10150C	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_09	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_11	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_12	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_1205	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：132.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150CHM3/4W	封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V10150CHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150CHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-M3/4W	封装/外壳：TO-220-3 包装：卷带（TR）描述：DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V10150C-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150C-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S_11	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S_12	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S_15	High Voltage Trench MOS Barrier Schottky Rectifier 文件：147.69 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S_15	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150SHM3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10150S-M3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10170C-M3_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：122 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V101KY5PAC400	Safety Standard Capacitors 文件：52.6 Kbytes Page：2 Pages	VATRONICS	VATRONICS
101	SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment	PRODUCTWELL	PRODUCTWELL
101	0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
101	Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t	Riedon	Riedon
101	Precision Wirewound Resistors 文件：318.25 Kbytes Page：2 Pages	Riedon	Riedon
101	Smooth, high torque, roller ratchet handle 文件：254.3 Kbytes Page：3 Pages	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2

V101产品属性

类型
描述
型号
V101
制造商
TAP-LOK(GROOV-PIN)

V101供应商更多...

更新时间：2025-10-14 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	V10150C	VISHAY/威世	24+	NA/	3350	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	V10150C-M3/4W	VISHAY	2016+	TO-220	6000	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市威雅利发展有限公司	V10150C-E3/4W	VISHAY	10+	TO220	2750	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
中天科工半导体（深圳）有限公司	V10150C-E3/4W	VISHAY/威世通	20+	TO220-3	38560	原装优势主营型号-可开原型号增税票	询价
深圳市宏世佳电子科技有限公司	V10150C-E3/4W	VISHAY	2025+	TO220-3	3827	全新原厂原装产品、公司现货销售	询价
深圳市河锋鑫科技有限公司	V10150CM3/4W	Vishay Semiconductor Diodes Di	22+	TO220AB	9000	原厂渠道,现货配单	询价
深圳市美思瑞电子科技有限公司	V10150C-M3/4W	VISHAY/威世	22+	TO-220	12245	现货,原厂原装假一罚十!	询价
深圳市中联芯电子有限公司	V10150C-E3/4W	VISHAY/威世	24+	TO-220	12000	原装正品真实现货杜绝虚假	询价
深圳市赛美科科技有限公司	V10150C-E3/4W	VISHAY		TO220	53650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市东来宝电子科技有限公司	V10150C-M3/4W	VISHAY/威世	24+	TO-220	39197	郑重承诺只做原装进口现货	询价

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V101价格

V101产品属性

V101供应商更多...

V101芯片相关品牌

V101规格书下载地址

V101参数引脚图相关

V101数据表相关新闻

V23047-A1024-A511

UZ1086G-SOT223R-AD-TG_UTC代理商

UXN40M7K

UXN40M7K

V15PM15-M3/H

V23079-A1006-B201

DdatasheetPDF页码索引