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V10150S价格
参考价格：￥3.0125
型号：V10150S-E3/4W 品牌：Vishay 备注：这里有V10150S多少钱，2025年最近7天走势，今日出价，今日竞价，V10150S批发/采购报价，V10150S行情走势销售排行榜，V10150S报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V10150S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V10150S | High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：147.69 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：带盒（TB） 描述：DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
AT9034 TRI Description 8W LED Downlight w/Dimm Driver - 110Deg beam - Satin Chrome - TRI-CCT | ATOMAitupu Technology Co., Ltd. 爱特姆深圳市爱特姆科技有限公司 | | ||
AT9012 TRI Description 11W LED Downlight with Dimmable Driver - 90 degree beam - Satin Chrome - TRI - SER II | ATOMAitupu Technology Co., Ltd. 爱特姆深圳市爱特姆科技有限公司 | | ||
AT9019 Description 170mm Downlight Extension Plate - Satin Chrome | ATOMAitupu Technology Co., Ltd. 爱特姆深圳市爱特姆科技有限公司 | | ||
Nylon PCB Supports - Imperial Spacing 文件：113.77 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
Heyco짰 Nylon PCB Supports - Imperial Spacing 文件：116.57 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
V10150S产品属性
- 类型
描述
- 型号
V10150S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
4250 |
原厂直销,现货供应,账期支持! |
|||
VTC |
24+ |
DIP28 |
3 |
||||
VTC |
25+ |
DIP16 |
524 |
全新原装正品支持含税 |
|||
VISHAY/威世 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
VISHAT |
21+ |
原厂封装 |
1975 |
||||
2020+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
VISHAT |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||||
VISHAT |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
V10150S规格书下载地址
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2019-8-31
DdatasheetPDF页码索引
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