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V10150S-E3SLASH4W中文资料

厂家型号

V10150S-E3SLASH4W

文件大小

166.33Kbytes

页面数量

5

功能描述

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

数据手册

下载地址一下载地址二到原厂下载

简称

VISHAY威世

生产厂商

Vishay Siliconix

中文名称

官网

V10150S-E3SLASH4W数据手册规格书PDF详情

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

更新时间:2021-9-14 10:50:00
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