位置：首页 > IC中文资料第7122页 > V10150C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V10150C | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V10150C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VISHAYVishay Siliconix 威世威世科技公司 | | |
V10150C | Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | |
V10150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V10150C | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V10150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V10150C | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：132.53 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa | MOTOROLA 摩托罗拉 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low | STMICROELECTRONICS 意法半导体 | |
V10150C产品属性
- 类型
描述
- 型号
V10150C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
VISHAY/威世通 |
20+ |
TO220-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
vishay |
25+ |
TO220-3 |
25368 |
原装正品，欢迎询价 |
|||
VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
TO220 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
22+ |
TO220-3 |
20000 |
只做原装 |
||||
VISHAY/威世 |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
25+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
V10150C规格书下载地址
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2019-8-31
DdatasheetPDF页码索引
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