型号 功能描述 生产厂家 企业 LOGO 操作
V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:723.43 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:132.53 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 10A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

AT9034 TRI

Description 8W LED Downlight w/Dimm Driver - 110Deg beam - Satin Chrome - TRI-CCT

ATOM

爱特姆

AT9012 TRI

Description 11W LED Downlight with Dimmable Driver - 90 degree beam - Satin Chrome - TRI - SER II

ATOM

爱特姆

AT9019

Description 170mm Downlight Extension Plate - Satin Chrome

ATOM

爱特姆

Nylon PCB Supports - Imperial Spacing

文件:113.77 Kbytes Page:1 Pages

Heyco

Heyco짰 Nylon PCB Supports - Imperial Spacing

文件:116.57 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

V10150C产品属性

  • 类型

    描述

  • 型号

    V10150C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2025-10-14 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
3350
原装现货,当天可交货,原型号开票
VISHAY
2016+
TO-220
6000
公司只做原装,假一罚十,可开17%增值税发票!
VISHAY
10+
TO220
2750
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世通
20+
TO220-3
38560
原装优势主营型号-可开原型号增税票
VISHAY
2025+
TO220-3
3827
全新原厂原装产品、公司现货销售
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
VISHAY/威世
22+
TO-220
12245
现货,原厂原装假一罚十!
VISHAY/威世
24+
TO-220
12000
原装正品真实现货杜绝虚假
VISHAY
TO220
53650
一级代理 原装正品假一罚十价格优势长期供货
VISHAY/威世
24+
TO-220
39197
郑重承诺只做原装进口现货

V10150C数据表相关新闻