2 Amps,100 Volts N-CHANNEL POWER MOSFET

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-offpower control directly from logic circuit supply voltages.The UTC UT2N10 is universally applied in logi • 2A, 100V\n• RDS(ON) = 1.050Ω\n• Design Optimized for 5V Gate Drives\n• Can be Driven Directly from QMOS, NMOS, TTL Circuits\n• Compatible with Automotive Drive Requirements\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

2 Amps,100 Volts N-CHANNEL POWER MOSFET

文件：150.43 Kbytes Page：3 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

2 Amps,100 Volts N-CHANNEL POWER MOSFET

文件：150.43 Kbytes Page：3 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：215.2 Kbytes Page：4 Pages

2 Amps,100 Volts N-CHANNEL POWER MOSFET

文件：150.43 Kbytes Page：3 Pages

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

Drain Current ID= 2A@ TC=25C

文件：65.05 Kbytes Page：2 Pages

COMPLEMENTARY ENHANCEMENT MODE MOSFET

文件：200.51 Kbytes Page：3 Pages