NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

封装/外壳：8-SMD，扁平引线裸焊盘 包装：散装 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD RF/IF，射频/中频和 RFID 射频放大器

包装：散装 描述：EVAL BOARD UPD5702TU 900MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

High Current Toroid Inductors

文件：474.35 Kbytes Page：1 Pages

CIRCUIT PROTECTION

文件：154.8 Kbytes Page：2 Pages

Modular air source ion bar

文件：260.8 Kbytes Page：3 Pages

portable digital audio 16bit A/D converter

文件：1.24293 Mbytes Page：33 Pages