NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

丝印代码：5702；Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

封装/外壳：8-SMD，扁平引线裸焊盘 包装：散装 描述：IC AMP 802.15.1 2.4GHZ 8MINIMOLD RF/IF，射频/中频和 RFID 射频放大器

包装：散装 描述：EVAL BOARD UPD5702TU 900MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

10/100/1000BASE-T CONTROLLER

BCM5702 OVERVIEW The BCM5702 is a fully-integrated 10/100/1000BASE-T Gigabit Ethernet media access control and physical layer transceiver solution for high-performance network applications. The BCM5702 is a highly integrated solution combining a triple-speed, IEEE 802.3 compliant media access con

DC/DC Converter Applications

Features • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The CPH5702 consists of two chips encapsulated in a package which are equivalent to the CPH3209 and the SB07-03C, respectively. • Ultrasmall-sized package

10-Bit, 40 MSPS A/D Converter

Description The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in a BiCMOS process. It is designed for high speed applications where wide bandwidth and low power consumption are essential. Its 40 MSPS speed is made possible by a fully differential pipeline architecture whi

10-Bit, 40 MSPS A/D Converter

Description The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in a BiCMOS process. It is designed for high speed applications where wide bandwidth and low power consumption are essential. Its 40 MSPS speed is made possible by a fully differential pipeline architecture whi

DC / DC Converter Applications

TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode Features • Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The MCH5702 consists of two chips which are equivalent to the MCH6201 and the S