位置:首页 > IC中文资料第619页 > UPD45128163G
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTL Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:932.36 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:821.74 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTL 文件:932.36 Kbytes Page:86 Pages | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththeposit | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
128M-bitSynchronousDRAM4-bank,LVTTLWTR(WideTemperatureRange) Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. Features •FullySynchronousDynamicRAM,withallsignalsreferenc | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |
UPD45128163G产品属性
- 类型
描述
- 型号
UPD45128163G
- 制造商
Renesas Electronics Corporation
- 功能描述
128 MBIT SDRAM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
2020+ |
TSOP |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
23+ |
NA/ |
8110 |
原厂直销,现货供应,账期支持! |
|||
NEC |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
NEC |
24+ |
TSOP |
880000 |
明嘉莱只做原装正品现货 |
|||
ELPIA |
23+ |
TSSOP54 |
20000 |
原厂原装正品现货 |
|||
NEC |
23+ |
TSOP |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
ELPIDA |
21+ |
TSOP54 |
6000 |
全新原装 现货 价优 |
|||
NEC |
2016+ |
TSOP54 |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
ELPIDA |
22+ |
TSOP54 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
23+ |
TSOP |
7360 |
原厂原装正品 |
UPD45128163G规格书下载地址
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深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:UPD30181AYF1-131-GA3-A 品牌:Renesas 包装:50 封装:BGA240
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