MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

MOS INTEGRATED CIRCUIT

Features • 262,144 words by 16 bits organization • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.) •

4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：143.8 Kbytes Page：24 Pages

4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：143.8 Kbytes Page：24 Pages

4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：143.8 Kbytes Page：24 Pages

4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

文件：143.8 Kbytes Page：24 Pages

Miniature Printed Circuit Board Relays, Sockets and Accessories

Features • SPST through DPDT contact arrangements. • Immersion cleanable and flux tight versions available. • VDE 10mm spacing, 5kV dielectric, coil to contacts. • UL Class F coil insulation system. • Conforms to UL 508, 1873, 353 and 1950. • Low profile; 15.7mm height. • Sens

16 Amp PC Board Miniature Relay

RTseries (DC Coil) 16 Amp PC Board Miniature Relay Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent approvals files of the agencies/laboratories and review them to ensure the product meets the requir

Power PCB Relay RT2

RTseries (DC Coil) 16 Amp PC Board Miniature Relay Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent approvals files of the agencies/laboratories and review them to ensure the product meets the requir

Power PCB Relay

文件：246.94 Kbytes Page：3 Pages

Power PCB Relay RT2

文件：215.26 Kbytes Page：3 Pages