| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD43256A | 32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
32,768x8-BITSTATICMIX-MOSRAM
| NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768X8-BITSTATICCMOSRAM Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
32,768x8-BITSTATICMIX-MOSRAM
| NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2402+ |
DIP-28 |
8324 |
原装正品!实单价优! |
|||
NEC |
22+ |
SOP28 |
29642 |
原装正品现货,可开13个点税 |
|||
NEC |
23+ |
DIP28 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
NEC |
24+ |
SOP28 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
20+ |
SOP28 |
6588 |
||||
NEC |
24+ |
DIP |
6000 |
全新原装正品现货,假一赔佰 |
|||
NEC |
23+ |
TSOP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
NEC |
09+ |
TSOP |
5500 |
原装无铅,优势热卖 |
|||
NEC |
25+ |
SOP |
1200 |
原装现货热卖中,提供一站式真芯服务 |
|||
NEC |
25+ |
SOP |
880000 |
明嘉莱只做原装正品现货 |
UPD43256A芯片相关品牌
UPD43256A规格书下载地址
UPD43256A参数引脚图相关
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UPD43256A数据表相关新闻
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2024-5-20UPD30181AYF1-131-GA3-A 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
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UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD720114GA-9EU-A
UPD720114GA-9EU-A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。特征•低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。•低电流消耗：国际直拨电话=100mA最大。•降噪电路，操作时INC已关闭。•小型表面贴装封装：16引脚SOP的塑
2013-2-5
DdatasheetPDF页码索引
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