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位置：首页 > IC中文资料第524页 > UPD43256B

型号 功能描述 生产厂家&企业 LOGO 操作
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

文件：224.55 Kbytes Page：28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

文件：231.03 Kbytes Page：24 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-A

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-AXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-AXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-BXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-BXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BCZ-70L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-70LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-85L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-85LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70L

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70L-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70LL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70LL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85L

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-85L-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85LL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-85LL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A10

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A10

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A10-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A12

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A12

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A12-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A85

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A85

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A85-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B10

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-B10-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B12

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B12

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-B12-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B15

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70LL-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70LL-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70LL-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70LL-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70X-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70X-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70X-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70X-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85LL-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85LL-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85LL-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85LL-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85X-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85X-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85X-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85X-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-A10-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-A10-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD43256B产品属性

  • 类型

    描述

  • 型号

    UPD43256B

  • 制造商

    NEC Electronics Corporation

UPD43256B供应商更多...

更新时间：2024-4-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
UPD43256BGW-10X-9KL
NEC
2016+
TSOP28
6808
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
UPD43256BGX-85LL-EJA
MIT
23+
TSOP32
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
UPD43256BGU-85L
NEC
2020+
SOP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
UPD43256BGU-85L-E1
NEC
20+
SOP
67500
原装优势主营型号-可开原型号增税票
询价
深圳市明嘉莱科技有限公司
UPD43256BCZ-70LL
NEC CORPORATION
22+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
UPD43256BGW-B12X-9JL-E3
NEC
23+
NA/
11250
原厂直销,现货供应,账期支持!
询价
深圳市金芯世纪电子有限公司
UPD43256BGU-70LL
NEC
22+
SOP28
100000
代理渠道/只做原装/可含税
询价
深圳市威雅利发展有限公司
UPD43256BGU-B12
NEC
98+
SOP28
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市华睿芯科技有限公司
UPD43256BCZ-85L
NEC
23+
DIP28
20000
原厂原装正品现货
询价
深圳市科恒伟业电子有限公司
UPD43256BGX-85LL-EJA
NEC
1950+
TSOP32
4856
只做原装正品现货!或订货假一赔十!
询价

UPD43256B芯片相关品牌

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UPD43256B规格书下载地址

UPD43256B参数引脚图相关

UPD43256B数据表相关新闻

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  • UPD30181AYF1-131-GA3-A 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240

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  • UPD720114GA-YEU-AT

    UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.

    2020-11-22

  • UPD720114GA-9EU-A

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    2020-11-22

  • UPD16818GR-8JG-步进电机控制器/驱动器

    描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻R

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    2013-2-5

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