型号 功能描述 生产厂家 企业 LOGO 操作

MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT

DESCRIPTION The µPD168101 is monolithic quad H-bridge driver LSI which uses power MOSFETs in the output stages. By using the MOS process, this driver IC has substantially improved the voltage loss of the output stage and power consumption as compared with conventional driver circuits using bipola

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES Four H bridge circuits employing power MOSFETs Low current consumption by eliminating charge pump VM pin current when power-OFF: 10 μA MAX. VDD pin current: 10 μA MAX. Input logic frequency: 100 kHz 3-V power supply Minimum operating supply voltage: 2.5 V Low voltage malfunction pr

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES Four H bridge circuits employing power MOSFETs Low current consumption by eliminating charge pump VM pin current when power-OFF: 10 μA MAX. VDD pin current: 10 μA MAX. Input logic frequency: 100 kHz 3-V power supply Minimum operating supply voltage: 2.5 V Low voltage malfunction pr

RENESAS

瑞萨

MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT

DESCRIPTION The µPD168101 is monolithic quad H-bridge driver LSI which uses power MOSFETs in the output stages. By using the MOS process, this driver IC has substantially improved the voltage loss of the output stage and power consumption as compared with conventional driver circuits using bipola

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES - Six H bridge circuits employing power MOSFETs - Voltage drive type: 4 channels, current drive type (constant current chopping type): 2 channels - Low current consumption due to elimination of charge pump circuit - Input logic frequency: 100 kHz supported - 3 V power supply supporte

RENESAS

瑞萨

MONOLITHIC 6-CHANNEL H BRIDGE DRIVER

DESCRIPTION The µPD168102 is a monolithic 6-channel H bridge driver IC consisting of a CMOS controller and a MOS output stage. Because it uses a MOS process, this driver IC consumes less current and loses less voltage at the output stage than conventional driver ICs that use bipolar transistors.

NEC

瑞萨

MONOLITHIC 6-CHANNEL H BRIDGE DRIVER

DESCRIPTION The µPD168102 is a monolithic 6-channel H bridge driver IC consisting of a CMOS controller and a MOS output stage. Because it uses a MOS process, this driver IC consumes less current and loses less voltage at the output stage than conventional driver ICs that use bipolar transistors.

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES - Six H bridge circuits employing power MOSFETs - Voltage drive type: 4 channels, current drive type (constant current chopping type): 2 channels - Low current consumption due to elimination of charge pump circuit - Input logic frequency: 100 kHz supported - 3 V power supply supporte

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOS FET • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V) • PWM outpu

RENESAS

瑞萨

5-CHANNEL OPERATIONAL AMPLIFIER, IRIS DRIVER, AND 4-CHANNEL H-BRIDGE DRIVER

DESCRIPTION The µ PD168103 is the motor driver IC with IRIS control circuit, operational amplifier and 4-ch H-bridge output. Smooth operation is possible for IRIS control with linear method. The package is 48-pin thin type QFN and then it helps reduce the mounting area and height. The µ PD16810

NEC

瑞萨

5-CHANNEL OPERATIONAL AMPLIFIER, IRIS DRIVER, AND 4-CHANNEL H-BRIDGE DRIVER

DESCRIPTION The µ PD168103A is the motor driver IC with IRIS control circuit, operational amplifier and 4-ch H-bridge output. Smooth operation is possible for IRIS control with linear method. The package is 48-pin thin type QFN and then it helps reduce the mounting area and height. The µ PD1681

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOSFET • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V) • PWM output

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOSFET • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V) • PWM output

RENESAS

瑞萨

5-CHANNEL OPERATIONAL AMPLIFIER, IRIS DRIVER, AND 4-CHANNEL H-BRIDGE DRIVER

DESCRIPTION The µ PD168103A is the motor driver IC with IRIS control circuit, operational amplifier and 4-ch H-bridge output. Smooth operation is possible for IRIS control with linear method. The package is 48-pin thin type QFN and then it helps reduce the mounting area and height. The µ PD1681

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOS FET • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V) • PWM outpu

RENESAS

瑞萨

5-CHANNEL OPERATIONAL AMPLIFIER, IRIS DRIVER, AND 4-CHANNEL H-BRIDGE DRIVER

DESCRIPTION The µ PD168103 is the motor driver IC with IRIS control circuit, operational amplifier and 4-ch H-bridge output. Smooth operation is possible for IRIS control with linear method. The package is 48-pin thin type QFN and then it helps reduce the mounting area and height. The µ PD16810

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOSFET Stepping motors driver : 4 circuits, IRIS driver : 1 circuit. • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • 5-ch H-bridge circuits employing power MOSFET Stepping motors driver : 4 circuits, IRIS driver : 1 circuit. • Low-voltage driving LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM = VSHUTTER = VIRIS = 2.7 to 5.5 V • Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Five H bridge circuits employing power MOSFETs Voltage drive type: 4 channels, current drive type (constant current linear drive): 1 channel • Low current consumption due to elimination of charge pump circuit • Input logic frequency: 100 kHz supported • 3 V power supply supported

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Five H bridge circuits employing power MOSFETs Voltage drive type: 4 channels, current drive type (constant current linear drive): 1 channel • Low current consumption due to elimination of charge pump circuit • Input logic frequency: 100 kHz supported • 3 V power supply supported

RENESAS

瑞萨

MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT

RENESAS

瑞萨

MONOLITHIC 6-CHANNEL H BRIDGE DRIVER

RENESAS

瑞萨

5-CHANNEL OPERATIONAL AMPLIFIER, IRIS DRIVER, AND 4-CHANNEL H-BRIDGE DRIVER

RENESAS

瑞萨

Integrated 16-Channel LED Drivers with Switch-Mode Boost and SEPIC Controller

General Description The MAX16809/MAX16810 are integrated, high-efficiency white or RGB LED drivers. They are designed for LCD backlighting and other LED lighting applications with multiple strings of LEDs. The MAX16809/MAX16810’s current-mode PWM controller regulates the necessary voltage to the

Maxim

美信

Integrated 16-Channel LED Drivers with Switch-Mode Boost and SEPIC Controller

General Description The MAX16809/MAX16810 are integrated, high-efficiency white or RGB LED drivers. They are designed for LCD backlighting and other LED lighting applications with multiple strings of LEDs. The MAX16809/MAX16810’s current-mode PWM controller regulates the necessary voltage to the

Maxim

美信

Asymmetric beam for wall-washing optimized for 0.5 mm metal sheet or profile

文件:4.44898 Mbytes Page:9 Pages

LEDIL

Integrated 16-Channel LED Drivers with Switch-Mode Boost and SEPIC Controller

文件:276.17 Kbytes Page:23 Pages

Maxim

美信

UPD16810产品属性

  • 类型

    描述

  • 型号

    UPD16810

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT

更新时间:2025-12-28 16:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
22+
QFN
2500
全新原装现货!自家库存!
NEC
24+
QFN
32060
NEC
24+
QFN
5000
全新原装正品,现货销售
NEC
24+
QFN
9600
原装现货,优势供应,支持实单!
NEC
01+
QFN
1402
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
0804+
QFN
18
原装现货海量库存欢迎咨询
NEC
24+
WQFN-48
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
2023+
QFN
8800
正品渠道现货 终端可提供BOM表配单。
NEC
2016+
WQFN-48
8880
只做原装,假一罚十,公司可开17%增值税发票!
NEC
23+
QFN
50000
全新原装正品现货,支持订货

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    2020-2-27
  • UPD168116A-7通道支撑带微步脉冲输入函数H桥式驱动器

    描述 该μPD168116A是一个7通道H -桥用微小阶跃函数配套脉冲输入认为A由司机CMOS控制电路和一MOS输出阶段。它能降低电流消耗和在电压亏损输出级则为常规驱动程序使用双极晶体管,多亏一个MOS工艺就业。该μPD168116A可以驱动通过输入脉冲一步进电机,使信号行数必要 控制电机可以下降。 包是一个56引脚WQFN,有助于降低安装面积和高度。 该μPD168116A可以用来驱动两个步进马达或两个DC马达和一线圈。 特征 •七个H桥电路用人功率MOSFET •低电压驾驶 VDD的= 2.7

    2013-2-5
  • UPD16813-整体式双H桥驱动器电路

    描述 该mPD16813是单片双H桥驱动电路,在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级,电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想,双极步进电机驱动头部的一个FDD驱动器。 特征 •低(顶部和底部的ON电阻晶体管的总和)ON电阻RON的典型值=2.0瓦特。 •低电流消耗:国际直拨电话= 100 mA最大。 •降噪电路,操作时INC已关闭。 •小型表面贴装封装:16引脚SOP的塑

    2013-2-5
  • UPD16818GR-8JG-步进电机控制器/驱动器

    描述 该mPD16818是单片双H桥驱动器集成电路,它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管,该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路,使用双极晶体管。此外,驱动电流可以调节,在节电模式下使用外部电阻器。因此,该mPD16818作为一个两相励磁驱动电路的理想,双极步进电机驱动头执行器的一个FDD。 特征 •兼容电源电压3V-/5V- •引脚兼容与mPD16803 •低(顶部和底部的ON电阻马鞍山FET的总和)ON电阻 R

    2013-2-5
  • UPD168002-整体式6通道H桥式驱动器...

    描述 μPD168002的是单片6通道H桥驱动的CMOS控制电路和一个MOS输出由阶段。它可以减少电流消耗,并在输出级的电压损失与常规驱动程序使用双极晶体管,MOS工艺的一个工作表示感谢。在μPD168002采用P沟道MOS管场效应管输出级,并消除了电荷泵电路。因此,电路中的电流消耗操作可以大大减少。该封装是48引脚TQFP,有助于减少安装面积和高度。在μPD168002可以用来驱动一个步进马达和四个直流电动机,是为电机驱动器,适合 CD-ROM/CD音频。 特征 •六H桥电路采用功率MOS场效应管 ̶

    2013-2-5