SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：151.22 Kbytes Page：28 Pages

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：283.84 Kbytes Page：11 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes Page：27 Pages

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：1.63019 Mbytes Page：25 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

丝印代码：C3C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：151.22 Kbytes Page：28 Pages

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：283.84 Kbytes Page：11 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：散装 描述：IC RF AMP GP 2.4GHZ 6SO RF/IF，射频/中频和 RFID 射频放大器

包装：散装 描述：EVAL BOARD UPC8179TB 900MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

Vertical Deflection Booster For Slim CRTs

DESCRIPTION Designed for monitors and high performance TVs, the STV8179F vertical deflection booster can handle flyback voltages of up to 90V. In addition, it is possible to have a flyback voltage which is more than double that of the supply (Pin 2). This allows decreasing power consumption or

TV VERTICAL DEFLECTION BOOSTER

DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able to work with a flyback voltage more than the double of VS. The TDA8179FS operates with supplies up to 42V, flyback output up to 92V and provides up to 2App output current to drive to

TV VERTICAL DEFLECTION BOOSTER

DESCRIPTION Designed for monitors and high performance TVs, the TDA8179S vertical deflection booster delivers flyback voltages up to 90V. The TDA8179S operates with supplies up to 42V and provides up to 2App output current to drive to yoke. The TDA8179S is offered in HEPTAWATT package. ■ POWER