UPC8179价格

参考价格:¥2.3400

型号:UPC8179TB 品牌:NEC 备注:这里有UPC8179多少钱,2025年最近7天走势,今日出价,今日竞价,UPC8179批发/采购报价,UPC8179行情走势销售排行榜,UPC8179报价。
型号 功能描述 生产厂家 企业 LOGO 操作
UPC8179

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T

RENESAS

瑞萨

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:593.31 Kbytes Page:27 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:151.22 Kbytes Page:28 Pages

NEC

瑞萨

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:283.84 Kbytes Page:11 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:151.22 Kbytes Page:28 Pages

NEC

瑞萨

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:283.84 Kbytes Page:11 Pages

CEL

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:散装 描述:IC RF AMP GP 2.4GHZ 6SO RF/IF,射频/中频和 RFID 射频放大器

CEL

包装:散装 描述:EVAL BOARD UPC8179TB 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

NECs SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:434.03 Kbytes Page:7 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:434.03 Kbytes Page:7 Pages

CEL

5V Input Multi-channel System Power Supply IC

Power Supply IC Series for TFT-LCD Panels ● Description The BD8179MUV is a system power supply IC for TFT panels. A 1-chip IC providing a total of three voltages required for TFT panels, i.e., source voltage, gate high-level, and gate low-level voltage, thus constructing a TFT panel pow

ROHM

罗姆

T-1 Wire Terminal (standard)

T-1 Wire Terminal (standard) T-1 Sub-Midget Flange Base

CML

Heyco짰 Plug-In Device Contacts

文件:258.94 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PCB Contacts

文件:188.66 Kbytes Page:1 Pages

Heyco

Plug-In Device Contacts

文件:290.27 Kbytes Page:1 Pages

Heyco

UPC8179产品属性

  • 类型

    描述

  • 型号

    UPC8179

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

更新时间:2025-11-25 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT363
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
23+
SOT-363
50000
原装正品 支持实单
RENESAS/瑞萨
2223+
SOT-363
26800
只做原装正品假一赔十为客户做到零风险
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
NEC
23+
NA
5076
专做原装正品,假一罚百!
NEC
2450+
SOT-363
8850
只做原装正品假一赔十为客户做到零风险!!
UPC8179TB-E3-A
25+
2832
2832
CYPRESS/赛普拉斯
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
NEC/RENES
12+PB
SOT-563
6000
绝对原装自己现货
RENESAS
23+
SOT-563
20000

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    描述 mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。 mPC8112TB功能高阻抗集电极开路输出。 mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20 GHz的FT NESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。 应用

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