UPC8179价格

参考价格:¥2.3400

型号:UPC8179TB 品牌:NEC 备注:这里有UPC8179多少钱,2024年最近7天走势,今日出价,今日竞价,UPC8179批发/采购报价,UPC8179行情走势销售排行榜,UPC8179报价。
型号 功能描述 生产厂家&企业 LOGO 操作
UPC8179

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:PO(1dB)=+3.0dBmTYP.@f=1.0GHz PO(1dB)=+1.5dBmTYP.@f=1.9GHz PO(1dB)=+1.0dBmTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GH

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:PO(1dB)=+3.0dBmTYP.@f=1.0GHz PO(1dB)=+1.5dBmTYP.@f=1.9GHz PO(1dB)=+1.0dBmTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GH

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TKisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.µPC8179TKadopts6-pinlead-lessminimol

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=43.0dBTYP.@f=1.0GHz ISL=42.0dBTYP.@f=1.9GHz ISL=42.0dBTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GHz GP=15.5dBT

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=43.0dBTYP.@f=1.0GHz ISL=42.0dBTYP.@f=1.9GHz ISL=42.0dBTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GHz GP=15.5dBT

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TKisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.µPC8179TKadopts6-pinlead-lessminimol

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TKisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.µPC8179TKadopts6-pinlead-lessminimol

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=43.0dBTYP.@f=1.0GHz ISL=42.0dBTYP.@f=1.9GHz ISL=42.0dBTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GHz GP=15.5dBT

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:593.31 Kbytes Page:27 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:151.22 Kbytes Page:28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONRFICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:283.84 Kbytes Page:11 Pages

CEL

California Eastern Laboratories

CEL

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:151.22 Kbytes Page:28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONRFICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:283.84 Kbytes Page:11 Pages

CEL

California Eastern Laboratories

CEL

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:散装 描述:IC RF AMP GP 2.4GHZ 6SO RF/IF,射频/中频和 RFID 射频放大器

CEL

California Eastern Laboratories

CEL

包装:散装 描述:EVAL BOARD UPC8179TB 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Laboratories

CEL

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:434.03 Kbytes Page:7 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:434.03 Kbytes Page:7 Pages

CEL

California Eastern Laboratories

CEL

5VInputMulti-channelSystemPowerSupplyIC

PowerSupplyICSeriesforTFT-LCDPanels ●Description TheBD8179MUVisasystempowersupplyICforTFTpanels. A1-chipICprovidingatotalofthreevoltagesrequiredforTFTpanels,i.e.,sourcevoltage,gatehigh-level,andgatelow-levelvoltage,thusconstructingaTFTpanelpow

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

T-1WireTerminal(standard)

T-1WireTerminal(standard) T-1Sub-MidgetFlangeBase

CMLCML

CML

CML

Heyco짰Plug-InDeviceContacts

文件:258.94 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

PCBContacts

文件:188.66 Kbytes Page:1 Pages

Heyco

Heyco

Heyco

Plug-InDeviceContacts

文件:290.27 Kbytes Page:1 Pages

Heyco

Heyco

Heyco

UPC8179产品属性

  • 类型

    描述

  • 型号

    UPC8179

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

更新时间:2024-6-4 16:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2023+
SC70-6
53500
正品,原装现货
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
NEC
23+
SOT-363
30000
代理全新原装现货,价格优势
NEC
22+23+
SOT-666
44046
绝对原装正品现货,全新深圳原装进口现货
NEC/RENES
12+PB
SOT-563
6000
绝对原装自己现货
RENESAS/瑞萨
SOT363
7906200
NEC
2020+
SOT363
350000
100%进口原装正品公司现货库存
ROHM(罗姆)
2022+
UMT3
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
2052+
SOT363
6542
只做原装正品现货!或订货假一赔十!
NEC
23+
NA
5076
专做原装正品,假一罚百!

UPC8179芯片相关品牌

  • ASM-SENSOR
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  • IRCTT
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  • RFMD
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

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    描述mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。mPC8112TB功能高阻抗集电极开路输出。mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20GHz的FTNESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。应用

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