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UPC8179价格
参考价格:¥2.3400
型号:UPC8179TB 品牌:NEC 备注:这里有UPC8179多少钱,2026年最近7天走势,今日出价,今日竞价,UPC8179批发/采购报价,UPC8179行情走势销售排行榜,UPC8179报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPC8179 | SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 | NEC 瑞萨 | ||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH | RENESAS 瑞萨 | |||
丝印代码:C3C;BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GH | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T | RENESAS 瑞萨 | |||
丝印代码:6C;BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol | NEC 瑞萨 | |||
丝印代码:6C;BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:151.22 Kbytes Page:28 Pages | NEC 瑞萨 | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:593.31 Kbytes Page:27 Pages | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:283.84 Kbytes Page:11 Pages | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:151.22 Kbytes Page:28 Pages | NEC 瑞萨 | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:283.84 Kbytes Page:11 Pages | CEL | |||
封装/外壳:6-TSSOP,SC-88,SOT-363 包装:散装 描述:IC RF AMP GP 2.4GHZ 6SO RF/IF,射频/中频和 RFID 射频放大器 | CEL | |||
包装:散装 描述:EVAL BOARD UPC8179TB 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:434.03 Kbytes Page:7 Pages | CEL | |||
NECs SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:434.03 Kbytes Page:7 Pages | CEL | |||
Vertical Deflection Booster For Slim CRTs DESCRIPTION Designed for monitors and high performance TVs, the STV8179F vertical deflection booster can handle flyback voltages of up to 90V. In addition, it is possible to have a flyback voltage which is more than double that of the supply (Pin 2). This allows decreasing power consumption or | STMICROELECTRONICS 意法半导体 | |||
TV VERTICAL DEFLECTION BOOSTER DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able to work with a flyback voltage more than the double of VS. The TDA8179FS operates with supplies up to 42V, flyback output up to 92V and provides up to 2App output current to drive to | STMICROELECTRONICS 意法半导体 | |||
TV VERTICAL DEFLECTION BOOSTER DESCRIPTION Designed for monitors and high performance TVs, the TDA8179S vertical deflection booster delivers flyback voltages up to 90V. The TDA8179S operates with supplies up to 42V and provides up to 2App output current to drive to yoke. The TDA8179S is offered in HEPTAWATT package. ■ POWER | STMICROELECTRONICS 意法半导体 |
UPC8179产品属性
- 类型
描述
- 型号
UPC8179
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SC70-6 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
NEC |
24+ |
SOT363 |
8000 |
新到现货,只做全新原装正品 |
|||
NEC |
25+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
12000 |
只做原装!公司现货库存!QQ:2369405325 |
||||
NEC |
17+ |
SC70-6 |
6200 |
100%原装正品现货 |
|||
NEC |
24+ |
SOT363 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
24+ |
SOT-363/SOT-323-6 |
110700 |
新进库存/原装 |
|||
NEC |
24+ |
SOT-363 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
16+ |
SOT363 |
10000 |
进口原装现货/价格优势! |
|||
NEC |
0746 |
1004 |
优势货源原装正品 |
UPC8179规格书下载地址
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描述 mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。 mPC8112TB功能高阻抗集电极开路输出。 mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20 GHz的FT NESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。 应用
2012-12-14
DdatasheetPDF页码索引
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