位置:首页 > IC中文资料第5828页 > UPC811
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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UPC811 | J-FETINPUTLOW-OFFSETOPERATIONALAMPLIFIER DESCRIPTION TheμPC811operationalamplifieroffershighinput impedance,lowoffsetvoltage,highslewrate,and stableACoperatingcharacteristics.NEC'sunique high-speedPNPtransistor(fr-300MHz)intheoutput stagesolvestheoscillationproblemofcurrentsink- ingwithalargecapa | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
UPC811 | HighStability,LowOffsetVoltageJ-FETInputOperationalAmplifier FEATURES InputOffsetVoltage±1mV(TYP.)(±2.5mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagain | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Directmodulationrange:800MHzto1GHz •Supplyvoltagerange:VCC=2.7to3.6V •Lowoperationcurrent:ICC=24mAtypical@VCC=3V •Lowphasedifferenceduetodigitalphaseshifterisadopted. •20pinSSOPsuitableforhighdensitysurfacemounting. •Lowcurrent | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzDIRECTQUADRATUREMODULATORFORDIGITALMOBILECOMMUNICATION DESCRIPTION TheµPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SingleChipTransceiverSiliconMMICforPHS DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzQUADRATUREMODULATOR DESCRIPTION TheµPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzDIRECTQUADRATUREMODULATORFORDIGITALMOBILECOMMUNICATION DESCRIPTION TheµPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzQUADRATUREMODULATOR DESCRIPTION TheµPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMIC1stFREQUENCYDOWN-CONVERTERFORCELLULAR/CORDLESSTELEPHONE DESCRIPTION TheµPC8112TBisasiliconmonolithicintegratedcircuitdesignedas1stfrequencydown-converterforcellular/cordlesstelephonereceiverstage.ThisICconsistsofmixerandlocalamplifier.TheµPC8112TBfeatureshighimpedanceoutputofopencollector.SimilarICsoftheµPC2757TB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMIC1stFREQUENCYDOWN-CONVERTERFORCELLULAR/CORDLESSTELEPHONE DESCRIPTION TheµPC8112TBisasiliconmonolithicintegratedcircuitdesignedas1stfrequencydown-converterforcellular/cordlesstelephonereceiverstage.ThisICconsistsofmixerandlocalamplifier.TheµPC8112TBfeatureshighimpedanceoutputofopencollector.SimilarICsoftheµPC2757TB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •ExcellentRFperformance:IIP3=–7dBm@fRFin=1.9GHz(reference) IM3=–88dBm@PRFin=–38dBm,1.9GHz(reference) •SimilarconversiongaintomPC2757andlowernoisefigurethanmPC2758 •Minimizedcarrierleakage:RFLO=–80dB@fRFin=900MHz(reference) RFLO=–55dB@fRF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMIC1stFREQUENCYDOWN-CONVERTERFORCELLULAR/CORDLESSTELEPHONE DESCRIPTION TheµPC8112TBisasiliconmonolithicintegratedcircuitdesignedas1stfrequencydown-converterforcellular/cordlesstelephonereceiverstage.ThisICconsistsofmixerandlocalamplifier.TheµPC8112TBfeatureshighimpedanceoutputofopencollector.SimilarICsoftheµPC2757TB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •ExcellentRFperformance:IIP3=–7dBm@fRFin=1.9GHz(reference) IM3=–88dBm@PRFin=–38dBm,1.9GHz(reference) •SimilarconversiongaintomPC2757andlowernoisefigurethanmPC2758 •Minimizedcarrierleakage:RFLO=–80dB@fRFin=900MHz(reference) RFLO=–55dB@fRF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=2.7to5.5V •Lowcurrentconsumption:ICC=4.1mATYP.@VCC=VPS=3.0V •Widebandresponse:fRF=100to500MHz •Powersavefunction:ICCPS=1mAMAX.@VCC=3.0V,PS=0V •High-densitysurfacemounting:20-pinplasticSSOP(6.7´4.4´1.5mm) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VCC=2.7to5.5V •Lowcurrentconsumption:ICC=4.1mATYP.@VCC=VPS=3.0V •Widebandresponse:fRF=100to500MHz •Powersavefunction:ICCPS=1mAMAX.@VCC=3.0V,PS=0V •High-densitysurfacemounting:20-pinplasticSSOP(6.7´4.4´1.5mm) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
J-FETINPUTLOW-OFFSETOPERATIONALAMPLIFIER DESCRIPTION TheμPC811operationalamplifieroffershighinput impedance,lowoffsetvoltage,highslewrate,and stableACoperatingcharacteristics.NEC'sunique high-speedPNPtransistor(fr-300MHz)intheoutput stagesolvestheoscillationproblemofcurrentsink- ingwithalargecapa | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HighStability,LowOffsetVoltageJ-FETInputOperationalAmplifier FEATURES InputOffsetVoltage±1mV(TYP.)(±2.5mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagain | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzQUADRATUREMODULATOR 文件:75.38 Kbytes Page:6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzQUADRATUREMODULATOR 文件:75.38 Kbytes Page:6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1GHzQUADRATUREMODULATOR 文件:75.38 Kbytes Page:6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
3VSILICONMMICL-BANDFREQUENCYDOWNCONVERTER 文件:173.17 Kbytes Page:5 Pages | CEL California Eastern Laboratories | |||
3VSILICONMMICL-BANDFREQUENCYDOWNCONVERTER 文件:173.17 Kbytes Page:5 Pages | CEL California Eastern Laboratories | |||
封装/外壳:6-TSSOP,SC-88,SOT-363 包装:散装 描述:IC MIXER 800MHZ-2GHZ DWN 6SMD RF/IF,射频/中频和 RFID 射频混频器 | CEL California Eastern Laboratories | |||
包装:散装 描述:EVAL BOARD FOR UPC8112TB 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL California Eastern Laboratories | |||
500MHzAM/ASKRECEIVERIC 文件:77.62 Kbytes Page:8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
500MHzAM/ASKRECEIVERIC 文件:77.62 Kbytes Page:8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NECsVARIABLEGAINAMPLIFIER 文件:720.1 Kbytes Page:4 Pages | CEL California Eastern Laboratories | |||
1.9GHzAGCAMPLIFIER 文件:40.87 Kbytes Page:3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1.9GHzAGCAMPLIFIER 文件:40.87 Kbytes Page:3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1.9GHzAGCAMPLIFIER 文件:40.87 Kbytes Page:3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Mill-MaxSpring-loadedConnectorsMinimizeNoise 文件:2.45329 Mbytes Page:11 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
PCMount,Shocksafe5x20mm/6.3x32mmFuses 文件:81.73 Kbytes Page:1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 | |||
POWERTRIODE 文件:414.55 Kbytes Page:9 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
SurfaceMountBackBoxes 文件:104.21 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
SINGLEDIGITDISPLAY 文件:96.44 Kbytes Page:1 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |
UPC811产品属性
- 类型
描述
- 型号
UPC811
- 功能描述
UPC811 Data Sheet | Data Sheet[03/1993]
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
2016+ |
SOP8 |
3780 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
04+ |
SOP8 |
950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
23+ |
DIP8L/瓷 |
18000 |
||||
RENESAS/瑞萨 |
23+ |
TSOP-6 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SOT-163 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
24+ |
SOT363 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
22+ |
SOT-163 |
354000 |
||||
RENESAS/瑞萨 |
23+ |
SOT-363 |
50000 |
原装正品 支持实单 |
|||
NEC/RENESAS |
22+21+ |
SOT-363 |
7859 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
36200 |
正品授权货源可靠 |
UPC811规格书下载地址
UPC811参数引脚图相关
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UPC811数据表相关新闻
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描述该mPC1093可调精密并联稳压器的热稳定性保证。输出电压可设置之间的任何参考电压(2.495V)和36V值由两个外部电阻器。这些IC可应用于开关稳压器的误差放大器。特征•高精度•低温度系数•通过两个外部电阻调节输出电压•低动态阻抗订购信息型号封装mPC1093J3针塑料高级督察(至-92)mPC
2013-3-13UPC317-3终端正可调稳压器
描述mPC317是正电压可调三端稳压器,其中有1.5一个输出电流能力。可以由两个外部电阻设置输出电压1.3V和30V之间的任何值。特点•超过1.5A的输出电流•芯片上的一些保护电路(过电流保护,SOA保护和热关机)。
2013-1-9UPC8112TB-IC
描述mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。mPC8112TB功能高阻抗集电极开路输出。mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20GHz的FTNESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。应用
2012-12-14
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