J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER

DESCRIPTION The μPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fr-300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capa

High Stability, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 15 V/μs (TYP.)  Unity Gain Frequency 4 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Direct modulation range : 800 MHz to 1 GHz • Supply voltage range : VCC = 2.7 to 3.6 V • Low operation current : ICC = 24 mA typical @ VCC = 3 V • Low phase difference due to digital phase shifter is adopted. • 20 pin SSOP suitable for high density surface mounting. • Low current

1 GHz QUADRATURE MODULATOR

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

1 GHz QUADRATURE MODULATOR

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference) • Similar conversion gain to mPC2757 and lower noise figure than mPC2758 • Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRF

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference) IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference) • Similar conversion gain to mPC2757 and lower noise figure than mPC2758 • Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference) RFLO = –55 dB@fRF

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 5.5 V • Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V • Wideband response : fRF = 100 to 500 MHz • Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V • High-density surface mounting : 20-pin plastic SSOP (6.7 ´ 4.4 ´ 1.5 mm)

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 5.5 V • Low current consumption : ICC = 4.1 mA TYP.@VCC = VPS = 3.0 V • Wideband response : fRF = 100 to 500 MHz • Power save function : ICCPS = 1 mA MAX. @VCC = 3.0 V, PS = 0 V • High-density surface mounting : 20-pin plastic SSOP (6.7 ´ 4.4 ´ 1.5 mm)

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : f = 100 MHz to 1.92 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V • Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) • Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : f = 100 MHz to 1.92 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V • Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) • Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER

DESCRIPTION The μPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor (fr-300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capa

High Stability, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 15 V/μs (TYP.)  Unity Gain Frequency 4 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

1 GHz QUADRATURE MODULATOR

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1 GHz QUADRATURE MODULATOR

文件：75.38 Kbytes Page：6 Pages

1 GHz QUADRATURE MODULATOR

文件：75.38 Kbytes Page：6 Pages

3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

文件：173.17 Kbytes Page：5 Pages

3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

文件：173.17 Kbytes Page：5 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：散装 描述：IC MIXER 800MHZ-2GHZ DWN 6SMD RF/IF，射频/中频和 RFID 射频混频器

包装：散装 描述：EVAL BOARD FOR UPC8112TB 开发板，套件，编程器 射频评估和开发套件，开发板

500 MHz AM/ASK RECEIVER IC

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500 MHz AM/ASK RECEIVER IC

500 MHz AM/ASK RECEIVER IC

文件：77.62 Kbytes Page：8 Pages

NECs VARIABLE GAIN AMPLIFIER

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1.9 GHz AGC AMPLIFIER

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NECs VARIABLE GAIN AMPLIFIER

1.9 GHz AGC AMPLIFIER

文件：40.87 Kbytes Page：3 Pages

1.9 GHz AGC AMPLIFIER

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SLEEK AND SLIM, WITH SOFTLY ROUNDED CORNERS AND GENTLY CURVED ROCKERS, NEXUS COMBINES SUPERIOR QUALITY WITH STUNNING GOOD LOOK SAND EASY INSTALLATION.

10AX PLATE SWITCHES 20A SWITCHES 45A SWITCHES 13 AMP SOCKET OUTLETS ROUND PIN SOCKET OUTLETS 13 AMP FUSED CONNECTION UNITS 13 AMP FUSED CONNECTION UNITS WITH FLEX OUTLET 25 AMP FLEX OUTLET PLATE SHAVER SOCKET CO-AXIAL, SATELLITE AND TRIPLEX OUTLETS TELEPHONE & DATA OUTLETS DIMMERS SURF

efficient and cost-effective solution to wear problems on the shaft.

� DESCRIPTION The BECA 810 profile is a standard stainless steel sleeve. � APPLICATIONS Hubs Pinions Differentials Gear boxes Crankshafts � DESCRIPTION The BECA 811 profile is a premium stainless steel sleeve with a hard chrome treatment. � APPLICATIONS Hubs Pinions Different

Cartridge Fuse Holders Enclosed Fuseholders > Circuit Board Mounted

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PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses

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Mill-Max Spring-loaded Connectors Minimize Noise

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