BIPOLAR ANALOG INTEGRATED CIRCUIT

Features • Possible to select stations using only one varactor diode with narrow variable capacitance range • Tracking adjustment unnecessary • Coil switching between LW (long wave) and MW (middle wave) unnecessary • Less sensitivity deviation due to tracking error • High S/N: 60 dB • Signal

AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

The µPC2533 is an IC developed as an AM tuner for car stereos and car radios.\nIt employs an up-conversion type double super-heterodyne configuration (IF1 = 10.71 MHz, IF2 = 450 kHz).\nThe internal configuration consists of the MIX1 block (MIX1, OSC1, Buff1), MIX2 block (MIX2, OSC2, Buff2), IF ampli • Possible to select stations using only one varactor diode with narrow variable capacitance range\n• Tracking adjustment unnecessary\n• Coil switching between LW (long wave) and MW (middle wave) unnecessary\n• Less sensitivity deviation due to tracking error\n• High S/N: 60 dB\n• Signal meter outpu;

AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

BIPOLAR ANALOG INTEGRATED CIRCUIT

Features • Possible to select stations using only one varactor diode with narrow variable capacitance range • Tracking adjustment unnecessary • Coil switching between LW (long wave) and MW (middle wave) unnecessary • Less sensitivity deviation due to tracking error • High S/N: 60 dB • Signal

BIPOLAR ANALOG INTEGRATED CIRCUIT

Features • Possible to select stations using only one varactor diode with narrow variable capacitance range • Tracking adjustment unnecessary • Coil switching between LW (long wave) and MW (middle wave) unnecessary • Less sensitivity deviation due to tracking error • High S/N: 60 dB • Signal

AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

RDS DATA DEMODULATOR IC

Bi-CMOS INTEGRATED CIRCUIT RDS DATA DEMODULATOR IC The µPC2539 is data demodulator IC for FM receiver applying to Radio Data System in European countries and Radio Broadcasting Data System in USA. This IC carries out to extract 57kHz RDS signal from FM multiplex signal, demodulate data-

Bi-CMOS INTEGRATED CIRCUIT

FEATURES • Adjustment-free • Built-in 57kHz band-pass-filter consist of switched capactiors. • High sensitivity. • Employing digital PLL. • Small outline plastic package

Bi-CMOS INTEGRATED CIRCUIT

FEATURES • Adjustment-free • Built-in 57kHz band-pass-filter consist of switched capactiors. • High sensitivity. • Employing digital PLL. • Small outline plastic package

RDS DATA DEMODULATOR IC

Bi-CMOS INTEGRATED CIRCUIT RDS DATA DEMODULATOR IC The µPC2539 is data demodulator IC for FM receiver applying to Radio Data System in European countries and Radio Broadcasting Data System in USA. This IC carries out to extract 57kHz RDS signal from FM multiplex signal, demodulate data-

RDS DATA DEMODULATOR IC

Bi-CMOS INTEGRATED CIRCUIT\nRDS DATA DEMODULATOR ICThe µPC2539 is data demodulator IC for FM receiver applying to Radio Data System in European countries and Radio Broadcasting Data System in USA.\nThis IC carries out to extract 57kHz RDS signal from FM multiplex signal, demodulate data-stream, reco • Adjustment-free\n• Built-in 57kHz band-pass-filter consist of switched capactiors.\n• High sensitivity.\n• Employing digital PLL.\n• Small outline plastic package;

INDUSTRIAL LINEAR ICS

INDUSTRIAL LINEAR ICs

RDS DATA DEMODULATOR IC

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)