These devices are designed for low power audio amplifier and low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min)

• High DC Current Gain @ IC = 200 mAdc

hFE = 40−200

= 40−120

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

• High Current Gain Bandwidth Product −

fT = 40 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB

• Pb−Free Packages are Available*