Complementary Silicon Power Plastic Transistors

. . . designed for low power audio amplifier and low–current, high–speed switching applications.

• High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253

• High DC Current Gain @ IC = 200 mAdc

hFE = 40–200

= 40–120 — MJE243, MJE253

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

• High Current Gain Bandwidth Product —

fT = 40 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB