POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to Type MJE243 APPLICATIONS • Designed for low power audio amplifier and low-cur

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

4.0 A，100 V，PNP 双极功率晶体管

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications. • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)MJE243, MJE253\n• High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 -MJE243, MJE253\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc\n• High Current Gain Bandwidth Product - fT =;

音频功放晶体管

音频三极管

Silicon PNP transistor in a TO-126 Plastic Package.

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COMPLEMENTARY SILICON POWER TRANSITORS

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Complementary Silicon Power Plastic Transistors

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Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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Complementary Silicon Power Plastic Transistors

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Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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Complementary Silicon Power Plastic Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)