NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., ⏐S21e⏐2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f =

NPN Silicon Rf Transistor (With 2 Elements) In A 6-Pin Lead-Less Minimold (M16, 1208 Pkg)

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

Integrated Circuit Audio Power Amp, 1.5W

Description: The NTE828 is an audio amplifier in a 14–Lead DIP type package designed for use in medium power consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between Pin2 and Pin6 will increase the gain

Switched Capacitor Voltage Converter

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Switched Capacitor Voltage Converters

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