HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

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