HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., ⏐S21e⏐2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f =

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：46.82 Kbytes Page：7 Pages

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

Differential Input 4-Pole Filters

文件：544.41 Kbytes Page：13 Pages

2 X 2 8-Pole Filters

文件：605.43 Kbytes Page：19 Pages

8 Bit Programmable 4-Pole Pair Filters

文件：479.04 Kbytes Page：8 Pages

8 Bit Programmable 4-Pole Pair Filters

文件：527.01 Kbytes Page：8 Pages