HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：446.61 Kbytes Page：8 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：192.73 Kbytes Page：9 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA800TF contains two NE680 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：446.61 Kbytes Page：8 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：446.61 Kbytes Page：8 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：托盘 描述：RF TRANS 2 NPN 10V 8GHZ 6SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：192.73 Kbytes Page：9 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：446.61 Kbytes Page：8 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT） 描述：RF TRANS 2 NPN 10V 8GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

Single, Dual, Triple Output DC/DC Converter

DESCRIPTIONS The 800 series is family of miniature, high performance and high reliability DC/DC converters. The 800 series operates over 2:1 input voltage ranges of 9 to 18, 18 to 36 or 36 to 72VDC; providing single, dual and triple output combinations of 5, 12, 15, ±5, ±12, ±15, 5/±12 and 5/±15

RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP

• Current ratings to 40 A • VRRM to 150 V • Only fused-in-glass diodes used • 150 °C junction temperature • Recovery time : 25 nS • Surge ratings to 250 A • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • SN/Pb terminations

Panel Mount, Shocksafe 6.3x32mm Fuses

文件：78.01 Kbytes Page：1 Pages

Panel Mount, Shocksafe 6.3x32mm Fuses

文件：78.43 Kbytes Page：1 Pages

INTERCONNECTS .100??Grid (.030??dia.) Low Profile Headers & Versatile Sockets Single and Double Row

文件：184.76 Kbytes Page：1 Pages