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位置：首页 > IC中文资料第1636页 > MJE800

MJE800晶体管资料

  • MJE800别名：MJE800三极管、MJE800晶体管、MJE800晶体三极管

  • MJE800生产厂家：美国摩托罗拉半导体公司

  • MJE800制作材料：Si-N+Darl+Di

  • MJE800性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • MJE800封装形式：直插封装

  • MJE800极限工作电压：60V

  • MJE800最大电流允许值：4A

  • MJE800最大工作频率：<1MHZ或未知

  • MJE800引脚数：3

  • MJE800最大耗散功率：40W

  • MJE800放大倍数：β>750

  • MJE800图片代号：B-21

  • MJE800vtest：60

  • MJE800htest：999900

  • MJE800atest：4

  • MJE800wtest：40

  • MJE800代换 MJE800用什么型号代替：BD263,BD677,BD777,FD50B,2N3038,2N6039,

MJE800价格

参考价格：￥1.2952

型号：MJE800G 品牌：ON 备注：这里有MJE800多少钱，2025年最近7天走势，今日出价，今日竞价，MJE800批发/采购报价，MJE800行情走势销售排行榜，MJE800报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Motorola

摩托罗拉

MJE800

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ​​​​​​​ • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE800

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

SAVANTIC

MJE800

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

ISC

无锡固电

MJE800

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE800

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

Central

MJE800

Silicon NPN Power Transistors

文件：104.62 Kbytes Page：3 Pages

SAVANTIC

MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE800G

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800T

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE800T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

MJE800T

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Motorola

摩托罗拉

MJE800T

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800G

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE800G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE800STU

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE800T

isc Silicon NPN Darlington Power Transistor

文件：250.84 Kbytes Page：2 Pages

ISC

无锡固电

800

Single, Dual, Triple Output DC/DC Converter

DESCRIPTIONS The 800 series is family of miniature, high performance and high reliability DC/DC converters. The 800 series operates over 2:1 input voltage ranges of 9 to 18, 18 to 36 or 36 to 72VDC; providing single, dual and triple output combinations of 5, 12, 15, ±5, ±12, ±15, 5/±12 and 5/±15

MAKE-PS

800

RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP

• Current ratings to 40 A • VRRM to 150 V • Only fused-in-glass diodes used • 150 °C junction temperature • Recovery time : 25 nS • Surge ratings to 250 A • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • SN/Pb terminations

Microsemi

美高森美

800

Panel Mount, Shocksafe 6.3x32mm Fuses

文件：78.01 Kbytes Page：1 Pages

Littelfuse

力特

800

Panel Mount, Shocksafe 6.3x32mm Fuses

文件：78.43 Kbytes Page：1 Pages

Littelfuse

力特

800

INTERCONNECTS .100??Grid (.030??dia.) Low Profile Headers & Versatile Sockets Single and Double Row

文件：184.76 Kbytes Page：1 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MJE800产品属性

  • 类型

    描述

  • 型号

    MJE800

  • 功能描述

    达林顿晶体管 4A 60V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJE800供应商更多...

更新时间：2025-8-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJE800
onsemi(安森美)
24+
TO-126
1259
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
MJE800
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市科芯源微电子有限公司
MJE800
MOTOROLA/摩托罗拉
25+
TO-225AATO-126
54558
百分百原装现货 实单必成 欢迎询价
询价
深圳市联世界科技有限公司
MJE800G
ON
24+/25+
3985
原装正品现货库存价优
询价
深圳市明嘉莱科技有限公司
MJE800
M
24+
TO 126
157363
明嘉莱只做原装正品现货
询价
深圳市威雅利发展有限公司
MJE800
MOT
9515+
TO-126
43
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科恒伟业电子有限公司
MJE800
ST/ON
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
询价
深圳市凌旭科技有限公司
MJE800
MOT
21+
TO-126
1638
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
深圳市华来深电子有限公司
MJE800
ON
23+
TO-126
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市拓亿芯电子有限公司
MJE800
MOTOROLA/摩托罗拉
23+
TO-126
18000
全新原装现货,假一赔十
询价

MJE800芯片相关品牌

MJE800规格书下载地址

MJE800参数引脚图相关

MJE800数据表相关新闻

DdatasheetPDF页码索引

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