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MJE800晶体管资料

  • MJE800别名：MJE800三极管、MJE800晶体管、MJE800晶体三极管

  • MJE800生产厂家：美国摩托罗拉半导体公司

  • MJE800制作材料：Si-N+Darl+Di

  • MJE800性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • MJE800封装形式：直插封装

  • MJE800极限工作电压：60V

  • MJE800最大电流允许值：4A

  • MJE800最大工作频率：<1MHZ或未知

  • MJE800引脚数：3

  • MJE800最大耗散功率：40W

  • MJE800放大倍数：β>750

  • MJE800图片代号：B-21

  • MJE800vtest：60

  • MJE800htest：999900

  • MJE800atest：4

  • MJE800wtest：40

  • MJE800代换 MJE800用什么型号代替：BD263,BD677,BD777,FD50B,2N3038,2N6039,

MJE800价格

参考价格：￥1.2952

型号：MJE800G 品牌：ON 备注：这里有MJE800多少钱，2026年最近7天走势，今日出价，今日竞价，MJE800批发/采购报价，MJE800行情走势销售排行榜，MJE800报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE800

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ​​​​​​​ • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703

FAIRCHILD

仙童半导体

MJE800

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

CENTRAL

MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

MJE800

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

ISC

无锡固电

MJE800

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE800

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

SAVANTIC

MJE800

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices. • High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc\n• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication\n• Choice of Packages- MJE700 and MJE800 series\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

MJE800

Silicon NPN Power Transistors

文件：104.62 Kbytes Page：3 Pages

SAVANTIC

MJE800

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

CENTRAL

MJE800

Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-126

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE800G

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800T

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE800T

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

MJE800T

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE800T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

MJE800G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE800G

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE800STU

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE800T

isc Silicon NPN Darlington Power Transistor

文件：250.84 Kbytes Page：2 Pages

ISC

无锡固电

UPA800T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NEC

瑞萨

NSC800D

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

NSC

国半

MJE800产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Polarity：

    NPN

  • IC Continuous (A)：

    4

  • V(BR)CEO Min (V)：

    60

  • VCE(sat) Max (V)：

    2.5

  • hFE Min (k)：

    0.75

  • Package Type：

    TO-225-3

MJE800供应商更多...

更新时间：2026-5-18 18:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
MJE800G
ON/安森美
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市凌旭科技有限公司
MJE800G
ON/安森美
21+
TO225
1975
询价
深圳市正纳电子有限公司
MJE800G
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市富利微电子科技有限公司
MJE800G
ON/安森美
25+
TO-225
30000
原装正品公司现货,假一赔十!
询价
深圳市芯球通科技有限公司
MJE800G
ON(安森美)
23+
TO-225
13999
公司只做原装正品,假一赔十
询价
深圳市羿芯诚电子有限公司
MJE800G
ON/安森美
24+
TSSOP
10000
原装进口只做订货 寻找优势渠道合作
询价
深圳市达恩科技有限公司
MJE800
on
20+
4500
原装现货 也有国产替代
询价
标准国际(香港)有限公司
MJE800T
MOT
25+
55
公司优势库存 热卖中!
询价
深圳市中飞凌科技有限公司
MJE800G
ON(安森美)
26+
NA
60000
只有原装 可配单
询价
深圳诚思涵科技有限公司
MJE800G
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价

MJE800芯片相关品牌

MJE800规格书下载地址

MJE800参数引脚图相关

MJE800数据表相关新闻

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