MJE800T晶体管资料
MJE800T别名：MJE800T三极管、MJE800T晶体管、MJE800T晶体三极管
MJE800T生产厂家：
MJE800T制作材料：Si-N+Darl+Di
MJE800T性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
MJE800T封装形式：直插封装
MJE800T极限工作电压：60V
MJE800T最大电流允许值：4A
MJE800T最大工作频率：<1MHZ或未知
MJE800T引脚数：3
MJE800T最大耗散功率：50W
MJE800T放大倍数：β>750
MJE800T图片代号：B-10
MJE800Tvtest：60
MJE800Thtest：999900
- MJE800Tatest：4
MJE800Twtest：50
MJE800T代换 MJE800T用什么型号代替：BD715,BDW23A,BDW53A,BDW63A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE800T | DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 |   | |
MJE800T | POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | |
MJE800T | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | |
MJE800T | Plastic Darlington Complementary Silicon Power Transistors designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE800T | Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | CENTRAL | | |
MJE800T | Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE800T | isc Silicon NPN Darlington Power Transistor 文件：250.84 Kbytes Page：2 Pages | ISC 无锡固电 | | |
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | | ||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件：785.95 Kbytes Page：76 Pages | NSC 国半 | |
MJE800T产品属性
- 类型
描述
- Number of Elements per Chip：
1
- Minimum Operating Temperature：
-55°C
- Minimum DC Current Gain：
750@1.5A@3V
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum Continuous DC Collector Current：
4A
- Maximum Collector Emitter Voltage：
60V
- Maximum Collector Base Voltage：
60V
- Configuration：
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-126 |
97864 |
||||
ON/安森美 |
23+ |
TO-126 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOT |
25+ |
55 |
公司优势库存 热卖中! |
||||
MOTOROLA |
25+ |
NA |
126 |
专做原装正品,假一罚百! |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
ON/安森美 |
22+ |
TO-126 |
6000 |
十年配单,只做原装 |
|||
ON |
25+ |
TO-126 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
MJE800T规格书下载地址
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DdatasheetPDF页码索引
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