HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

• Low Noise

NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

• High Gain

|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

• A Mini Mold Package Adopted

• Built-in 2 Transistors (2 × 2SC4228)