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UPA50价格
参考价格：￥0.4550
型号：UPA502T 品牌：NEC 备注：这里有UPA50多少钱，2025年最近7天走势，今日出价，今日竞价，UPA50批发/采购报价，UPA50行情走势销售排行榜，UPA50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The µPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to µPA503T • Automatic mounting supported | NEC 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to mPA503T • Automatic mounting supported | RENESAS 瑞萨 | | ||
P-CHANNEL MOSFET (5-PIN 2 CIRCUITS) The µPA503T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to µPA502T • Automatic mounting supported | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to mPA502T • Automatic mounting supported | RENESAS 瑞萨 | | ||
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting supported | RENESAS 瑞萨 | | ||
SILICON TRANSISTOR NPN/PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQENCY GENERAL PURPOSE AMPLIFIER | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low | RENESAS 瑞萨 | | ||
MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION The μ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for a | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES • Composite type J-FET and NPN Transistor | RENESAS 瑞萨 | | ||
N-CHANNEL MOSFET FOR SWITCHING 文件：161.56 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
P-CHANNEL MOSFET FOR SWITCHING 文件：197.93 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
P-CHANNEL MOSFET FOR SWITCHING 文件：197.93 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
P-CHANNEL MOSFET FOR SWITCHING 文件：197.93 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) | RENESAS 瑞萨 | | ||
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING 文件：146.21 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING 文件：144.73 Kbytes Page：8 Pages | NEC 瑞萨 | |
UPA50产品属性
- 类型
描述
- 型号
UPA50
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
SOT23-5 |
30000 |
原装正品公司现货,假一赔十! |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
5934 |
原厂直销,现货供应,账期支持! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS |
2016+ |
SOT23-5 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
24+ |
SOT23-5 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
25+23+ |
Sot-153 |
29668 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
24+ |
SOT235 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-5 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
25+ |
SOT23-5 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
21+ |
SOT23-5 |
10000 |
只做原装,质量保证 |
UPA50规格书下载地址
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DdatasheetPDF页码索引
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