P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

FOR SWITCHING

DESCRIPTION

The μ PA507TE is a switching device, which can be driven directly

by a 1.8 V power source.

This device incorporates a MOS FET, which features a low on-state

resistance and excellent switching characteristics and a low forward

voltage Schottky barrier diode, and is suitable for applications such

as DC/DC converter of portable machine and so on.

FEATURES

• 1.8 V drive available (MOS FET)

• Low on-state resistance (MOS FET)

RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)

RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)

RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)

• Low forward voltage (Schottky barrier diode)

VF = 0.35 V TYP. (IF = 1.0 A)