MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

文件：146.21 Kbytes Page：8 Pages

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low

MOS FET WITH SCHOTTKY BARRIER DIODE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 3560 A Surge current 30 kA

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

300V, 64-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

General Description The HV507 is a low voltage serial to high voltage parallel converter with 64 high voltage push-pull outputs. This device has been designed for use as a printer driver for electrostatic applications. It can also be used in any application requiring multiple high voltage outpu

Silicon Rectifier Diode

Description: The NTE507 is a silicon rectifier diode designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. This device has a typical recovery time of 150 nanoseconds providing high efficiency