CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts

Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low forward voltage drop · High current capability · High reliability · Low power loss, high effciency · High surge current capability · High speed switching · Low leakage

Ultra fast switching for high efficiency

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature solderi

ULTRA FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature solderi

Ultra Fast Recovery Rectifier

[YENYO] Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakge current

2.0AMPS. SILICON ULTRA FAST RECTIFIERS

FEATURE .Low leakage .Low forward voltage drop .High current capability .High surge capability .High reliability .High temperature soldering guaranteed 260°C /10sec / 0.375 lead length at 5 lbs tension

2A 400V Fast recovery diode

文件：267.302 Kbytes Page：2 Pages

2.0AMPS. SILICON ULTRA FAST RECTIFIERS

文件：193.65 Kbytes Page：1 Pages

ULTRA FAST RECOVERY SILICON RECTIFIER

文件：886.28 Kbytes Page：2 Pages

Diode Rectifier

Diode Rectifier

2.0AMPS. GLASS PASSIVATED ULTRA FAST RECTIFIERS

文件：193.72 Kbytes Page：1 Pages

Glass Passivated Ultra Fast Recovery Rectifier

文件：659.37 Kbytes Page：2 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.