IR Transmitter and Receiver

Description The IC U2532B is a complete IR-Transmitter-Receiver IC according to the new IrDA 1.0 standard. ASK-modulation is also possible. Only an external PIN-photodiode and an infrared emitting diode with current limiting resistor must be connected to the corresponding pins. The amplifier with

Preamplifier for IR Remote Control

Description The IC U2535B is a complete IR receiver for data communication. The PIN photodiode converts the transmitted IR telegram into electronic input signals. This is separated by a special input circuit. The characteristics (filter,gain) of the following amplifier are determined by externa

Preamplifier for IR Remote Control

Description The IC U2535B is a complete IR receiver for data communication. The PIN photodiode converts the transmitted IR telegram into electronic input signals. This is separated by a special input circuit. The characteristics (filter,gain) of the following amplifier are determined by externa

USB连接器

USB连接器

USB Micro插座

U2500A Series USB Modular Simultaneous Sampling Multifunction DAQ Devices

文件：390.23 Kbytes Page：14 Pages

Monolithic Integrated Circuit

文件：269.14 Kbytes Page：1 Pages

IR RECEIVER FOR DATA COMMUNICATION

文件：173.57 Kbytes Page：9 Pages

IR Receiver for Data Communication

文件：201.78 Kbytes Page：9 Pages

IR RECEIVER FOR DATA COMMUNICATION

文件：173.57 Kbytes Page：9 Pages

IR RECEIVER FOR DATA COMMUNICATION

文件：173.57 Kbytes Page：9 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC RECEIVER 0/1 8SO 集成电路（IC） 驱动器，接收器，收发器

IR Receiver for Data Communication

文件：201.78 Kbytes Page：9 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC RECEIVER 0/1 8SO 集成电路（IC） 驱动器，接收器，收发器

IR Receiver for Data Communication

文件：201.78 Kbytes Page：9 Pages

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)