TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection

1 Features 1• Qualified for Automotive Applications • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

具有自动方向感应和 +/-15kV ESD 保护的 6 位双向电压电平转换器

This 6-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-v • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA≤ VCCB)\n• OE Input Circuit Referenced to VCCA\n• Ioff Supports Partial-Power-Down Mode Operation\n• ESD Protection Exceeds JESD 22\n• 150 V Machine Model (A115-A)\n• B Port \n• 150 V Machine Model (A115-A)\n• 1500 V Charged-Device Model (C;

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：667.44 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：650.71 Kbytes Page：20 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

丝印代码：YE06Q1；TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection

1 Features 1• Qualified for Automotive Applications • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-

丝印代码：YE06Q1；TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection

1 Features 1• Qualified for Automotive Applications • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

丝印代码：YE06Q1；TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection

1 Features 1• Qualified for Automotive Applications • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection

1 Features 1• Qualified for Automotive Applications • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

具有自动方向感应的汽车类 6 位双向电压电平转换器

这个 6 位非反向转换器使用两个独立的可配置电源轨。A 端口设计用于跟踪 VCCA。VCCA 支持从 1.2V 到 3.6V 范围内的任一电源电压。B 端口设计用于跟踪 VCCB。VCCB 支持从 1.65V 到 5.5V 范围内的任意电源电压。这使得该器件可在 1.2V、1.5V、1.8V、2.5V、3.3V 和 5V 电压节点之间任意进行通用低压双向转换。VCCA 不应超过 VCCB。\n\n当输出使能端 (OE) 输入为低电平时，所有输出都被置于高阻抗状态。\n\nTXB0106-Q1 器件被设计成 OE 输入电路由 VCCA 供电。\n\n该器件完全 适用于 使用 Ioff 的局部掉电 • 符合汽车类 标准\n• VCC 隔离特性—如果任何一个 VCC 输入在接地 (GND) 上，所有输出在高阻抗状态\n• Ioff 支持局部关断模式运行\n• A 端口 \n• 1500V 充电器件模型\n• B 端口 \n• 1500V 充电器件模型;

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10kV ESD Protection

1 Features • Qualified for Automotive Applications • 1.2V to 3.6V on A Port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State • OE Input Circuit Referenced to VCCA • Ioff Supports Partial-Power-Down

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：650.71 Kbytes Page：20 Pages

6-Bit Bidirectional Level-Shifting and Voltage Translator

文件：1.08153 Mbytes Page：28 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 10-kV ESD PROTECTION

文件：447.76 Kbytes Page：17 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：650.71 Kbytes Page：20 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：667.44 Kbytes Page：19 Pages

6-Bit Bidirectional Level-Shifting and Voltage Translator

文件：1.08153 Mbytes Page：28 Pages

LAUNCHXL-F28379D Overview

文件：1.13333 Mbytes Page：30 Pages

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 16TSSOP 集成电路（IC） 转换器，电平移位器

6-Bit Bidirectional Level-Shifting and Voltage Translator

文件：1.08153 Mbytes Page：28 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：667.44 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 10-kV ESD PROTECTION

文件：447.76 Kbytes Page：17 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：650.71 Kbytes Page：20 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：667.44 Kbytes Page：19 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

6-Bit Bidirectional Level-Shifting and Voltage Translator

文件：1.08153 Mbytes Page：28 Pages

封装/外壳：16-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 16VQFN 集成电路（IC） 转换器，电平移位器

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：667.44 Kbytes Page：19 Pages

6-Bit Bidirectional Level-Shifting and Voltage Translator

文件：1.08153 Mbytes Page：28 Pages

6-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：568.79 Kbytes Page：19 Pages

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan