TXB0106 6-Bit Bidirectional Level-Shifting and Voltage Translator With Auto-Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65 to 5.5V on B Port (VCCA ≤ VCCB) • VCC isolation feature – if either VCC input is at GND, all outputs are in the high-impedance state • OE input circuit referenced to VCCA • Low-power consumption, 4μA max ICC • Ioff supports partial-power-down mod

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan