MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 mΩ (typ.) (5) Less susceptible t

Crystal Oscillator SMD 2.0x1.6 19.2MHz

Features:  Surface Mount Seam Weld Package  Excellent Reliability Performance  Good Frequency Perturbation and Stability over temperature  Moisture Sensitivity Level (MSL) : Level-1 Application:  Supply Voltage CMOS Output  Option-able stand-by functions for output (Tri-state output).

Crystal Oscillator SMD 2.0x1.6 50MHz

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Moisture Sensitivity Level (MSL) : Level-1 Application: Supply Voltage CMOS Output Option-able stand-by function for output .

Power SiC MOSFETs

Power SiC MOSFETs

Crystal Oscillators