型号 功能描述 生产厂家 企业 LOGO 操作
TW060N120C

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

TOSHIBA

东芝

TW060N120C

Power SiC MOSFETs

TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 60 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

TOSHIBA

东芝

更新时间:2025-9-28 16:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Toshiba
23+
TO-247
3268
SIC芯片新能源供应全新正品
N/A
24+
DIP-8
130
SAMTEC/申泰
2450+
12PIN
8540
只做原装正品假一赔十为客户做到零风险!!
MURATA/村田
18+
PTH
12500
全新原装正品,本司专业配单,大单小单都配
TST
23+
SMD
25000
专业配单,原装正品假一罚十,代理渠道价格优
SAMTEC/申泰
2018+
14PIN
600
TOSHIBA
24+
con
10000
查现货到京北通宇商城
Toshiba
2025+
TO-247-3
12420
SAMTEC/申泰
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择

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