位置:首页 > IC中文资料第3746页 > TSM2N60CP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM2N60CP | N CHANNEL POWER ENHANCEMENT MODE MOSFET General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des | TSC 台湾半导体 | ||
TSM2N60CP | N-Channel Power Enhancement Mode MOSFET 文件:157.8 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
TSM2N60CP | 600V N-Channel Power MOSFET 文件:459.79 Kbytes Page:8 Pages | TSC 台湾半导体 | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | |||
600V N-Channel Power MOSFET 文件:348.32 Kbytes Page:8 Pages | TSC 台湾半导体 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件:271.17 Kbytes Page:10 Pages | MOTOROLA 摩托罗拉 |
TSM2N60CP产品属性
- 类型
描述
- 型号
TSM2N60CP
- 功能描述
MOSFET 600V 2Amp N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOYODA |
24+ |
MODULE |
2173 |
公司大量全新正品 随时可以发货 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
丰田 |
26+ |
模块 |
3562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
2511 |
SOP-8 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
STMicroelectronics |
24+ |
8-SO |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
|||
SEMTECH |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
TS |
23+ |
TO252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
11+ |
DIP-8 |
8000 |
全新原装,绝对正品现货供应 |
|||
TSC |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TSC/台湾半导体 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
TSM2N60CP规格书下载地址
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2019-9-29
DdatasheetPDF页码索引
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